| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Bahrami, Amin
Leibniz Institute for Solid State and Materials Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024SnS2 Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applicationscitations
- 2024Structural, optical, and electrical characterization of TiO2-doped yttria-stabilized zirconia electrolytes grown by atomic layer deposition
- 2024Structural, optical, and electrical characterization of TiO2-doped yttria-stabilized zirconia electrolytes grown by atomic layer depositioncitations
- 2022Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistorscitations
- 2022Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors
- 2022The Role of Al2O3 ALD Coating on Sn-Based Intermetallic Anodes for Rate Capability and Long-Term Cycling in Lithium-Ion Batteriescitations
- 2021Progress and challenges in using sustainable carbon anodes in rechargeable metal-ion batteries
- 2021Current State-of-the-Art in the Interface/Surface Modification of Thermoelectric Materials
- 2019Mechanical properties and microstructural stability of CuTa/Cu composite coatingscitations
- 2018Compositional and Tribo‐Mechanical Characterization of Ti‐Ta Coatings Prepared by Confocal Dual Magnetron Co‐Sputteringcitations
Places of action
| Organizations | Location | People |
|---|
article
SnS2 Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications
Abstract
<jats:title>Abstract</jats:title><jats:p>SnS<jats:sub>2</jats:sub> stands out as a highly promising 2D material with significant potential for applications in the field of electronics and photovoltaic technologies. Numerous attempts have been undertaken to modulate the physical properties of SnS<jats:sub>2</jats:sub> by doping with various metal ions. Here, a series of Sb‐doped SnS<jats:sub>2</jats:sub> is deposited via atomic layer deposition (ALD) super‐cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS<jats:sub>2</jats:sub>. It is found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb doping from 4.32 eV (SnS<jats:sub>2</jats:sub>) to 4.75 eV (Sb‐doped SnS<jats:sub>2</jats:sub> with 9:1 ratio). When integrated into photodetectors, the Sb‐doped SnS<jats:sub>2</jats:sub> showed improved performance, demonstrating increased peak photoresponsivity values from 19.5 to 27.8 A W<jats:sup>−1</jats:sup> at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next‐generation optoelectronic applications based on SnS<jats:sub>2</jats:sub>.</jats:p>