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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Huang, Hongli
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Publications (5/5 displayed)
- 20242D MXene Interface Engineered Bismuth Telluride Thermoelectric Module with Improved Efficiency for Waste Heat Recoverycitations
- 20233D Architectural MXene‐based Composite Films for Stealth Terahertz Electromagnetic Interference Shielding Performancecitations
- 2023Dispersion of InSb Nanoinclusions in Cu<sub>3</sub>SbS<sub>4</sub> for Improved Stability and Thermoelectric Efficiencycitations
- 2023Dispersion of InSb nanoinclusions in Cu3SbS4 for improved stability and thermoelectric efficiencycitations
- 20233D architectural MXene composite films for stealth terahertz shielding performancecitations
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article
2D MXene Interface Engineered Bismuth Telluride Thermoelectric Module with Improved Efficiency for Waste Heat Recovery
Abstract
<jats:title>Abstract</jats:title><jats:p>Graphene analog MXenes are the best options for interface engineering traditional thermoelectric materials. For the first time, a composite‐engineered TEG device composed of heavily doped bismuth and antimony telluride with incorporated Ti<jats:sub>3</jats:sub>C<jats:sub>2</jats:sub>T<jats:sub>x</jats:sub> (MXene) nanoflakes is developed. Incorporated MXenes improved the electrical conductivity by carrier injection and reduces thermal conductivity by interfacial phonon scattering in both composites. The fabricated composite TEG device resulted in a maximum power of 1.14 mW and a power density of 6.1 mWcm<jats:sup>−2</jats:sup>. The fabricated composite TEG also demonstrates strong power generation stability and durability. Added MXenes improve the mechanical stability by employing a dispersion‐strengthening mechanism. Conclusively, the developed composite‐engineered TEG device is a facile and efficiency‐improving option for next‐generation bismuth telluride‐based commercial TEG devices.</jats:p>