| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Salvestrini, Jean-Paul
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
- 2024On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
- 2023Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Templatecitations
- 2022Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devicescitations
- 2020Single crystalline boron rich B(Al)N alloys grown by MOVPEcitations
- 2018Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performancecitations
- 2015Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templatescitations
- 2014Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire templatecitations
- 2010Use of functionalized nanosilica to improve thermo-mechanical properties of epoxy adhesive joint bonding aluminium substratescitations
- 2008Electro-optic and dielectric properties of Hafnium-doped congruent lithium niobate crystalscitations
Places of action
| Organizations | Location | People |
|---|
article
Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template
Abstract
International audience ; Several technological challenges have prevented GaN‐based micro‐LEDs from finding application in mass market displays, despite their unique properties such as very high brightness and the very fast response time of GaN‐based materials. The primary challenges are the cost and complexity of lift‐off and transfer of LEDs from sapphire substrates to suitable supports as well as the lowered performance of tiny micro‐LEDs caused by chemical etching that defines individual LEDs. Herein, this work reports demonstration of a complete process that solves these challenges with epitaxy and cleanroom technologies that are commercially available. The process begins with van der Waals epitaxy of 2D h‐BN on silica masks with square, triangular and hexagonal patterns on sapphire substrates which define the micro‐LED regions. Then selective area growth of MQW LED heterostructures, with ultra smooth crystalline sidewalls, down to ultra tiny size of 1.4 µm is performed. Because of the lack of vertical chemical bonds in the h‐BN layer, simple mechanical lift‐off and transfer is performed on an array of LEDs heterostructures down to size of 8 µm. Finally, transparent ITO p‐contacts are deposited on LEDs with uniform lift‐off, resulting in high brightness LEDs.