693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pedersen, Henrik
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Topics
Publications (42/42 displayed)
- 2024The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Filmscitations
- 2024On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC†citations
- 2024Reinforcement of Polyimine Covalent Adaptable Networks with Mechanically Interlocked Derivatives of SWNTs.
- 2024Competitive co-diffusion as a route to enhanced step coverage in chemical vapor depositioncitations
- 2024On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiCcitations
- 2024Plasma electron characterization in electron chemical vapor depositioncitations
- 2023Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloyscitations
- 2023The influence of carbon on polytype and growth stability of epitaxial hexagonal boron nitride films and layerscitations
- 2023Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electronscitations
- 2023Surface chemical mechanisms of trimethyl aluminum in atomic layer deposition of AlNcitations
- 2023Conformal chemical vapor deposition of boron-rich boron carbide thin films from triethylboroncitations
- 2023Chemical vapor deposition of amorphous boron carbide coatings from mixtures of trimethylboron and triethylboroncitations
- 2022Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and watercitations
- 2022Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001) and 4H-SiC(0001) substrates by chemical vapor depositioncitations
- 2022Fabrication of semi-transparent SrTaO2N photoanodes with a GaN underlayer grown via atomic layer depositioncitations
- 2022Growth of silicon carbide multilayers with varying preferred growth orientationcitations
- 2022Understanding indium nitride thin film growth under ALD conditions by atomic scale modelling : From the bulk to the In-rich layercitations
- 2022Surface Structures from NH(3) Chemisorption in CVD and ALD of AlN, GaN, and InN Filmscitations
- 2021Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition
- 2021Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Designcitations
- 2021Surface ligand removal in atomic layer deposition of GaN using triethylgalliumcitations
- 2021On the dynamics in chemical vapor deposition of InNcitations
- 2020In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Depositioncitations
- 2020Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminumcitations
- 2020Chemical vapor deposition of metallic films using plasma electrons as reducing agentscitations
- 2020Chemical vapor deposition of sp(2)-boron nitride on Si(111) substrates from triethylboron and ammonia: Effect of surface treatmentscitations
- 2019Atomic layer deposition of InN using trimethylindium and ammonia plasmacitations
- 2019Thermodynamic stability of hexagonal and rhombohedral boron nitride under chemical vapor deposition conditions from van der Waals corrected first principles calculationscitations
- 2018Plasma CVD of hydrogenated boron-carbon thin films from triethylboroncitations
- 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Depositioncitations
- 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Depositioncitations
- 2017Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistrycitations
- 2016Trimethylboron as Single-Source Precursor for Boron-Carbon Thin Film Synthesis by Plasma Chemical Vapor Depositioncitations
- 2016Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Depositioncitations
- 2016Trimethylboron as single-source precursor for boron-carbon thin film synthesis by plasma chemical vapor depositioncitations
- 2015Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculationscitations
- 2015Initial stages of growth and the influence of temperature during chemical vapor deposition of sp(2)-BN filmscitations
- 2014Studying chemical vapor deposition processes with theoretical chemistrycitations
- 2013Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computationscitations
- 2012A novel high-power pulse PECVD methodcitations
- 2012On the effect of water and oxygen in chemical vapor deposition of boron nitridecitations
- 2011Epitaxial CVD growthof sp2-hybridized boron nitrideusing aluminum nitride as buffer layercitations
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article
The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Films
Abstract
<jats:title>Abstract</jats:title><jats:p>Boron nitride (BN) is a promising 2D material as well as a potential wide‐bandgap semiconductor. Chemical vapor deposition (CVD) is commonly used to deposit single layers or thin films of BN, but the deposition process is insufficiently understood at an atomic scale. the CVD of BN is studied using two boron precursors, the organoboranes, triethylborane, and trimethylborane. Using high resolution (scanning) transmission electron microscopy and electron energy loss spectroscopy, this study shows that hexagonal‐BN (h‐BN) nucleates and grows epitaxially for ≈4 nm before it either polytype transforms to rhombohedral‐BN (r‐BN), turns to less ordered turbostratic‐BN or is terminated by a layer of amorphous carbon. this study proposes that the carbon in the organoboranes deposits on the epitaxially growing h‐BN surface and this either leads to the polytype transition to r‐BN, the transition to less ordered BN growth, or complete surface poisoning with carbon terminating BN growth. These results question the use of organoboranes in CVD of epitaxial BN films, and the polytype stability of h‐BN growing on graphene.</jats:p>