| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Persson, Per
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Filmscitations
- 2024On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC†citations
- 2024Upscaled Synthesis Protocol for Phase-Pure, Colloidally Stable MXenes with Long Shelf Livescitations
- 2024TiB1.8 single layers and epitaxial TiB2-based superlattices by magnetron sputtering using a TiB (Ti:B = 1:1) targetcitations
- 2024Exploring the thermal behavior and diffusive functionality of structural defects and phase boundaries in near-stoichiometric chromium diborides by <i>in situ</i> scanning transmission electron microscopy
- 2024On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiCcitations
- 2023The influence of carbon on polytype and growth stability of epitaxial hexagonal boron nitride films and layerscitations
- 2022Epitaxial Growth of CaMnO3-y Films on LaAlO3 (112 over bar 0) by Pulsed Direct Current Reactive Magnetron Sputteringcitations
- 2014Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopycitations
- 2013Thermal stability of Al1−xInxN (0 0 0 1) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscopecitations
- 2011Spontaneous Formation of AlInN Core–Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxycitations
- 2011Epitaxial CVD growthof sp2-hybridized boron nitrideusing aluminum nitride as buffer layercitations
- 2010Adsorption, desorption, and surface-promoted hydrolysis of Glucose-1-phosphate in Aqueous Goethite (α-FeOOH) Suspensionscitations
- 2010Nanoscale precipitation patterns in carbon-nickel nanocomposite thin films: Period and tilt control via ion energy and deposition anglecitations
- 2009Microstructural characterization of the tool-chip interface enabled by focused ion beam and analytical electron microscopycitations
- 2007Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputteringcitations
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article
The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Films
Abstract
<jats:title>Abstract</jats:title><jats:p>Boron nitride (BN) is a promising 2D material as well as a potential wide‐bandgap semiconductor. Chemical vapor deposition (CVD) is commonly used to deposit single layers or thin films of BN, but the deposition process is insufficiently understood at an atomic scale. the CVD of BN is studied using two boron precursors, the organoboranes, triethylborane, and trimethylborane. Using high resolution (scanning) transmission electron microscopy and electron energy loss spectroscopy, this study shows that hexagonal‐BN (h‐BN) nucleates and grows epitaxially for ≈4 nm before it either polytype transforms to rhombohedral‐BN (r‐BN), turns to less ordered turbostratic‐BN or is terminated by a layer of amorphous carbon. this study proposes that the carbon in the organoboranes deposits on the epitaxially growing h‐BN surface and this either leads to the polytype transition to r‐BN, the transition to less ordered BN growth, or complete surface poisoning with carbon terminating BN growth. These results question the use of organoboranes in CVD of epitaxial BN films, and the polytype stability of h‐BN growing on graphene.</jats:p>