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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rijnders, Guus
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr<sub>0.6</sub>Ti<sub>0.4</sub>O<sub>3</sub> Thin Films
- 2024The effect of intrinsic magnetic order on electrochemical water splittingcitations
- 2024Stabilizing Perovskite Pb(Mg<sub>0.33</sub>Nb<sub>0.67</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> Thin Films by Fast Deposition and Tensile Mismatched Growth Templatecitations
- 2023On the importance of the SrTiO3 template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg0.33Nb0.67)O3-PbTiO3 layers with Sicitations
- 2021Growth and crystallization of sio2/geo2 thin films on si(100) substratescitations
- 2021Growth and crystallization of sio 2 /geo 2 thin films on si(100) substratescitations
- 2020Single-Source, Solvent-Free, Room Temperature Deposition of Black γ-CsSnI 3 Filmscitations
- 2020Origins of infrared transparency in highly conductive perovskite stannate BaSnO3citations
- 2020Single‐Source, Solvent‐Free, Room Temperature Deposition of Black γ‐CsSnI3 Filmscitations
- 2020Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaNcitations
- 2017Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substratescitations
- 2017One step toward a new generation of C-MOS compatible oxide PN junctionscitations
- 2016Long-range domain structure and symmetry engineering by interfacial oxygen octahedral coupling at heterostructure interfacecitations
- 2016A flexoelectric microelectromechanical system on siliconcitations
- 2015Epitaxy on Demandcitations
- 2014Patterning of Epitaxial Perovskites from Micro and Nano Molded Stencil Maskscitations
- 2012High-Temperature Magnetic Insulating Phase in Ultrathin La0.67Sr0.33MnO3 Filmscitations
- 2011Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructurescitations
- 2009Low-temperature solution synthesis of chemically functional ferromagnetic FePtAu nanoparticlescitations
- 2007Magnetic effects at the interface between non-magnetic oxidescitations
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article
Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr<sub>0.6</sub>Ti<sub>0.4</sub>O<sub>3</sub> Thin Films
Abstract
<jats:title>Abstract</jats:title><jats:p>Lead based bulk piezoelectric materials, e.g., PbZr<jats:sub>x</jats:sub>Ti<jats:sub>1‐x</jats:sub>O<jats:sub>3</jats:sub> (PZT), are widely used in electromechanical applications, sensors, and transducers, for which optimally performing thin films are needed. The results of a multi‐domain Landau–Ginzberg‐Devonshire model applicable to clamped ferroelectric thin films are used to predict the lattice symmetry and properties of clamped PZT thin films on different substrates. Guided by the thermal strain phase diagrams that are produced by this model, experimentally structural transitions are observed. These can be related to changes of the piezoelectric properties in PZT(x = 0.6) thin films that are grown on CaF<jats:sub>2</jats:sub>, SrTiO<jats:sub>3</jats:sub> (STO) and 70% PbMg<jats:sub>1/3</jats:sub>Nb<jats:sub>2/3</jats:sub>O<jats:sub>3</jats:sub>‐30% PbTiO<jats:sub>3</jats:sub> (PMN‐PT) substrates by pulsed laser deposition. Through temperature en field dependent in situ X‐ray reciprocal space mapping (RSMs) and piezoelectric force microscopy (PFM), the low symmetry monoclinic phase and polarization rotation are observed in the film on STO and can be linked to the measured enhanced properties. The study identifies a monoclinic ‐rhombohedral <jats:bold><jats:italic>M<jats:sub>C</jats:sub></jats:italic></jats:bold>‐<jats:bold><jats:italic>M<jats:sub>A</jats:sub></jats:italic></jats:bold>‐<jats:bold><jats:italic>R</jats:italic></jats:bold> crystal symmetry path as the polarization rotation mechanism. The films on CaF<jats:sub>2</jats:sub> and PMN‐PT remain in the same symmetry phase up to the ferroelectric‐paraelectric phase transition, as predicted. These results support the validity of the multi‐domain model which provides the possibility to predict the behavior of clamped, piezoelectric PZT thin films, and design films with enhanced properties.</jats:p>