| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Stutzmann, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023Exciton confinement in homo- and heteroepitaxial ZnO/Zn(1-x)Mg(x)O quantum wells with x < 0.1
- 2023Annealing‐Free Ohmic Contacts to <i>n</i>‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlO<i><sub>x</sub></i>
- 2023Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Aluminacitations
- 2023Environmental Sensitivity of GaN Nanofins Grown by Selective Area Molecular Beam Epitaxycitations
- 2022Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxycitations
- 2018Uniformly coated highly porous graphene/MnO2 foams for flexible asymmetric supercapacitorscitations
- 2017Electrochemical characterization of GaN surface statescitations
- 2017Hybrid Photovoltaics – from Fundamentals towards Applicationcitations
- 2016α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistorscitations
- 2015Bipolar polaron pair recombination in P3HT/PCBM solar cells
- 2009Metal–insulator transition and superconductivity in highly boron-doped nanocrystalline diamond filmscitations
- 2009Low-temperature transport in highly boron-doped nanocrystalline diamondcitations
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article
Annealing‐Free Ohmic Contacts to <i>n</i>‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlO<i><sub>x</sub></i>
Abstract
<jats:title>Abstract</jats:title><jats:p>A plasma‐assisted atomic layer deposition (PE‐ALD) process is reported for creating ohmic contacts to n‐type GaN that combines native oxide reduction, near‐surface doping, and encapsulation of GaN in a single processing step, thereby eliminating the need for both wet chemical etching of the native oxide before metallization and thermal annealing after contact formation. Repeated ALD cycling of trimethyl aluminum (TMA) and high‐intensity hydrogen (H<jats:sub>2</jats:sub>) plasma results in the deposition of a sub‐nanometer‐thin (≈8 Å) AlO<jats:sub>x</jats:sub> layer via the partial transformation of the GaN surface oxide into AlO<jats:sub>x</jats:sub>. Hydrogen plasma‐induced nitrogen vacancies in the near‐surface region of GaN serve as shallow donors, promoting efficient out‐of‐plane electrical transport. Subsequent metallization with a Ti/Al/Ti/Au stack results in low contact resistance, ohmic behavior, and smooth morphology without requiring annealing. This electrical contracting approach thus meets the thermal budget requirements for Si‐based complementary metal–oxide–semiconductor structures and can facilitate the design and fabrication of advanced GaN‐on‐Si heterodevices.</jats:p>