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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Zhang, Heng
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Publications (15/15 displayed)
- 2024Strong Substrate Influence on Atomic Structure and Properties of Epitaxial VO 2 Thin Filmscitations
- 2024Strong substrate influence on atomic structure and properties of epitaxial VO2 thin filmscitations
- 2023Strong substrate influence on atomic structure and properties of epitaxial VO2 thin filmscitations
- 2023Effects of Intermixing in Sb2Te3/Ge1+xTe Multilayers on the Thermoelectric Power Factorcitations
- 2023Dislocations and a domains coupling in PbTiO3 thin filmscitations
- 2023N=8 Armchair Graphene Nanoribbons: Solution Synthesis and High Charge Carrier Mobility**
- 2023N=8 armchair graphene nanoribbonscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2020Differences in Sb2Te3 growth by pulsed laser and sputter depositioncitations
- 2020Frequency-domain study of nonthermal gigahertz phonons reveals Fano coupling to charge carrierscitations
- 2019Fluorine‐Free Noble Salt Anion for High‐Performance All‐Solid‐State Lithium–Sulfur Batteriescitations
- 2017Vibrational spectroscopic studies combined with viscosity analysis and VTF calculation for hybrid polymer electrolytescitations
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article
Strong substrate influence on atomic structure and properties of epitaxial VO2 thin films
Abstract
The metal–insulator transition (MIT) observed in vanadium dioxide has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and structures involved. The ability to understand and tune the MIT behavior is of vital importance from the perspective of both underlying fundamental science as well as potential applications. In this work, scanning transmission electron microscopy (STEM) is used to investigate cross-section lamella of the VO2 films deposited using pulsed laser deposition on three substrates: c-cut sapphire, TiO2(101) and TiO2(001). Advanced STEM imaging is performed in which also the oxygen atom columns are resolved. The overall film quality and structures on atomic and nanoscale are linked to the electrical transition characteristics. Relatively poor MIT characteristics are observed on c-sapphire due to the presence of very small domains with six orientation variants, and on TiO2 (001) due to the presence of cracks induced by stress relaxation. However, the MIT on TiO2 (101) behaves favorably, despite similar stress relaxation which, however, only leads to domain boundaries but no cracks. ; Peer reviewed