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| Naji, M. |
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| Azevedo, Nuno Monteiro |
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Chundak, Mykhailo
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Publications (7/7 displayed)
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2024Area-Selective Etching of Poly(lactic acid) Films via Catalytic Hydrogenolysis and Crackingcitations
- 2023Molecular layer deposition of hybrid silphenylene-based dielectric filmcitations
- 2023Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Filmscitations
- 2022Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2-n thin filmscitations
- 2020Argon gas cluster fragmentation and scattering as a probe of the surface physics of thermoset polymerscitations
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article
Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Films
Abstract
This paper presents preparation of boron-doped Al2O3 thin films by atomic layer deposition (ALD) using phenylboronic acid (PBA) and trimethylaluminum (TMA) as precursors. Deposition temperatures of 160-300 degrees C are studied, giving a maximum growth per cycle (GPC) of 0.77 angstrom at 200 degrees C. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) are used to study the surface morphology and roughness of the films. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), Time-of-flight elastic recoil detection analysis (ToF-ERDA), and X-ray photoelectron spectroscopy (XPS) are used to study the composition of the films. An annealing process is carried out at 450 degrees C for 1 h to investigate its effect on the elemental composition and electrical properties of the boron-doped Al2O3 thin films. The boron-doped Al2O3 70 nm thick film deposited at 200 degrees C has a boron content of 3.7 at.% with low leakage current density (10(-9) to 10(-6) A cm(-2)) when the film thickness is 70 nm. The dielectric constant of this boron doped Al2O3 film is 5.18. ; Peer reviewed