| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Volz, Kerstin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
- 2024A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructurescitations
- 2023Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductorscitations
- 2023Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holdercitations
- 2022Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cycling
- 2022Advanced Analytical Characterization of Interface Degradation in Ni-Rich NCM Cathode Co-Sintered with LATP Solid Electrolytecitations
- 2021Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cyclingcitations
- 2021Reaction of Li1.3Al0.3Ti1.7(PO4)3 and LiNi0.6Co0.2Mn0.2O2 in co-sintered composite cathodes for solid-state batteriescitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2017GaAs 1-x Bi x /GaN y As 1-y type-II quantum wells:novel strain-balanced heterostructures for GaAs-based near- & mid-infrared photonicscitations
- 2017GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonicscitations
- 2016Optical gain in GaAsBi/GaAs quantum well diode laserscitations
- 2014Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristorscitations
- 2010MOVPE growth of III-V solar cells on silicon in 300 mm closed coupled showerhead reactor
Places of action
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article
Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holder
Abstract
<jats:title>Abstract</jats:title><jats:p>Nanowires are a promising structure to create new defect‐free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism using tertiary‐butyl phosphine (TBP) and trimethylgallium (TMGa) as precursors in an in situ closed gas cell heating holder are shown. This holder is a model system to investigate the processes in metal‐organic vapour phase epitaxy (MOVPE). GaP nanowires change their growth direction after random distances by producing kinks. Statistics of these kink angles show dominant values of around 70.5°, 109.5°, and 123.7°. A custom holder tip capable of holding a single heating chip is used to perform scanning precession electron diffraction (SPED) measurements on the nanowire kinks. The results show that the predominant kink angles result from micro twins of first and second order. Understanding the defect formation and resulting geometry changes in GaP nanowires can lead to increased control over their shape during growth and mark a huge step toward applicable nanowire devices.</jats:p>