| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Stutzmann, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023Exciton confinement in homo- and heteroepitaxial ZnO/Zn(1-x)Mg(x)O quantum wells with x < 0.1
- 2023Annealing‐Free Ohmic Contacts to <i>n</i>‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlO<i><sub>x</sub></i>
- 2023Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Aluminacitations
- 2023Environmental Sensitivity of GaN Nanofins Grown by Selective Area Molecular Beam Epitaxycitations
- 2022Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxycitations
- 2018Uniformly coated highly porous graphene/MnO2 foams for flexible asymmetric supercapacitorscitations
- 2017Electrochemical characterization of GaN surface statescitations
- 2017Hybrid Photovoltaics – from Fundamentals towards Applicationcitations
- 2016α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistorscitations
- 2015Bipolar polaron pair recombination in P3HT/PCBM solar cells
- 2009Metal–insulator transition and superconductivity in highly boron-doped nanocrystalline diamond filmscitations
- 2009Low-temperature transport in highly boron-doped nanocrystalline diamondcitations
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article
Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina
Abstract
Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on scalable processes for interface manipulation of structured surfaces on the atomic level. While ALD allows the synthesis of conformal films with utmost control over the thickness, atomically‐defined closed coatings and surface modifications are challenging to achieve because of 3D growth during nucleation. Here, a route is presented toward the sub‐nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon substrates for the spatial control of the surface charge density and interface energetics. Trimethylaluminum in combination with remote hydrogen plasma is used instead of a gas‐phase oxidant for the transformation of silicon dioxide (SiO2) into alumina. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which is exploited to deposit ultrathin AlOx layers in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx/SiO2 interfaces possessing 0.3 nm step heights and surface potential steps exceeding 0.4 V. In addition, the introduction of fixed negative charges of 9 × 10^12 cm-2 enables modulation of the surface band bending, which is relevant to the field‐effect passivation of silicon and low‐impedance charge transfer across contact interfaces.