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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Rieger, Bernhard
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024A Fluorescent Polymer for Facile One-Step Writing of Polychromic Hidden Information in Flexible Films
- 2024Ambient catalytic spinning of polyethylene nanofiberscitations
- 2023Controlling polyethylene branching via surface confinement of Ni complexescitations
- 2023Evaluating the molecular weight distribution of ultrahigh molecular weight polypropylene through rheologycitations
- 2023Annealing‐Free Ohmic Contacts to <i>n</i>‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlO<i><sub>x</sub></i>
- 2023Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Aluminacitations
- 2023Fiber Spinning of Ultrahigh Molecular Weight Isotactic Polypropylene: Melt Spinning and Melt Drawingcitations
- 2023Recent advances on α-diimine Ni and Pd complexes for catalyzed ethylene (Co)polymerization: A comprehensive review
- 2023Thermally Latent Bases in Dynamic Covalent Polymer Networks and their Emerging Applicationscitations
- 2023Recent advances on α -diimine Ni and Pd complexes for catalyzed ethylene (co)polymerization: a comprehensive reviewcitations
- 2021Introduction of Photolatent Bases for Locally Controlling Dynamic Exchange Reactions in Thermo-Activated Vitrimerscitations
- 2015Concerning the eeactivation of cobalt(III)-based porphyrin and salen catalysts in epoxide/CO 2 copolymerizationcitations
Places of action
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article
Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina
Abstract
Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on scalable processes for interface manipulation of structured surfaces on the atomic level. While ALD allows the synthesis of conformal films with utmost control over the thickness, atomically‐defined closed coatings and surface modifications are challenging to achieve because of 3D growth during nucleation. Here, a route is presented toward the sub‐nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon substrates for the spatial control of the surface charge density and interface energetics. Trimethylaluminum in combination with remote hydrogen plasma is used instead of a gas‐phase oxidant for the transformation of silicon dioxide (SiO2) into alumina. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which is exploited to deposit ultrathin AlOx layers in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx/SiO2 interfaces possessing 0.3 nm step heights and surface potential steps exceeding 0.4 V. In addition, the introduction of fixed negative charges of 9 × 10^12 cm-2 enables modulation of the surface band bending, which is relevant to the field‐effect passivation of silicon and low‐impedance charge transfer across contact interfaces.