| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Valenzuela, Sergio O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2022Passivation of Bi2Te3 topological insulator by transferred CVD-graphene : toward intermixing-free interfacescitations
- 2022Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayercitations
- 2022Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayer
- 2022Passivation of Bi<sub>2</sub>Te<sub>3</sub> Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfacescitations
- 2022Unraveling heat transport and dissipation in suspended MoSe2 from bulk to monolayercitations
- 2022Room-temperature charge to spin interconversion in proximitized graphene
- 2021Large-area van der Waals epitaxy and magnetic characterization of Fe3GeTe2 films on graphenecitations
- 2021Control of spin-charge conversion in van der Waals heterostructurescitations
- 2021Low-symmetry topological materials for large charge-to-spin interconversion : the case of transition metal dichalcogenide monolayerscitations
- 2021Large-area van der Waals epitaxy and magnetic characterization of Fe3GeTe2films on graphene
- 2018Impact of the in situ rise in hydrogen partial pressure on graphene shape evolution during CVD growth of graphenecitations
- 2018Impact of the in situ rise in hydrogen partial pressure on graphene shape evolution during CVD growth of graphenecitations
- 2017Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111)citations
- 2017Measurement of spin-orbit torques from Rashba and topological surface states
- 2015Graphene spintronics:The European Flagship perspectivecitations
- 2015Graphene spintronics: the European Flagship perspective
- 2015Graphene spintronics: the European Flagship perspectivecitations
- 2015Graphene spintronicscitations
- 2014Thermal energy harvestingcitations
Places of action
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article
Passivation of Bi<sub>2</sub>Te<sub>3</sub> Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces
Abstract
<jats:title>Abstract</jats:title><jats:p>The investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X‐ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated and intermixing‐free interfaces in the topological insulator Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub> by means of dry‐transferred CVD graphene are reported. After air exposure, no traces of Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub> oxidation are found. Furthermore, it is demonstrated that graphene acts as a very efficient metal and chalcogen diffusion barrier in Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub>/graphene/permalloy (Py) heterostructures, which are relevant for spintronics. Such results are in stark contrast with the significant surface degradation observed in bare Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub> under ambient conditions and the deep BiTe bonding disruption that occurs in Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub>/Py heterostructures. These findings provide a new approach to control and engineer topological insulator interfaces for spintronic applications and a new platform to investigate the combined use of graphene and topological insulator Dirac states.</jats:p>