| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bonell, Frédéric
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Light-driven Electrodynamics and Demagnetization in Fe$_n$GeTe$_2$ (n = 3, 5) Thin Films
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2023Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
- 2022Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation
- 2022Passivation of Bi<sub>2</sub>Te<sub>3</sub> Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfacescitations
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2022Passivation of Bi$_2$Te$_3$ topological insulator by transferred CVD‐graphene: toward intermixing‐free interfacescitations
- 2021Control of spin–charge conversion in van der Waals heterostructurescitations
- 2021Spin-orbit torques in topological insulator / two-dimensional ferromagnet heterostructures
- 2017Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperaturecitations
- 2013Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barrierscitations
- 2012Spin-Polarized Electron Tunneling in bcc FeCo/MgO/FeCo(001) Magnetic Tunnel Junctionscitations
- 2009MgO-Based Epitaxial Magnetic Tunnel Junctions Using Fe-V Electrodescitations
Places of action
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article
Passivation of Bi<sub>2</sub>Te<sub>3</sub> Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces
Abstract
<jats:title>Abstract</jats:title><jats:p>The investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X‐ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated and intermixing‐free interfaces in the topological insulator Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub> by means of dry‐transferred CVD graphene are reported. After air exposure, no traces of Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub> oxidation are found. Furthermore, it is demonstrated that graphene acts as a very efficient metal and chalcogen diffusion barrier in Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub>/graphene/permalloy (Py) heterostructures, which are relevant for spintronics. Such results are in stark contrast with the significant surface degradation observed in bare Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub> under ambient conditions and the deep BiTe bonding disruption that occurs in Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub>/Py heterostructures. These findings provide a new approach to control and engineer topological insulator interfaces for spintronic applications and a new platform to investigate the combined use of graphene and topological insulator Dirac states.</jats:p>