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Oliveira, Kevin
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Publications (5/5 displayed)
- 2021Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterizationcitations
- 2021Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterizationcitations
- 2021High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cellscitations
- 2020Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3 ; Culprits and benefitscitations
- 2020Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3citations
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article
Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization
Abstract
<p>Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers that can be up-scaled still remains a massive task. Admittance measurements on metal–oxide–semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge carrier transport layer. This work discloses a new pathway for a fundamental characterization of the oxide/semiconductor interface in PSCs. Inverted MOS structures, that is, glass/fluorine-doped tin oxide/tin oxide (SnO<sub>2</sub>)/perovskite are fabricated and characterized allowing to perform a comparative study on the optoelectronic characteristics of the interface between the perovskite and sputtered SnO<sub>2</sub>. Admittance measurements allow to assess the interface fixed oxide charges (Q<sub>f</sub>) and interface traps density (D<sub>it</sub>), which are extremely relevant parameters that define interface properties of extraction layers. It is concluded that a 30 nm thick SnO<sub>2</sub> layer without annealing presents an additional recombination mechanism compared to the other studied layers, and a 20 nm thick SnO<sub>2</sub> layer without annealing presents the highest positive Q<sub>f</sub> values. Thus, an effective method is shown for the characterization of the charge carrier transport layer/perovskite interface using the analysis performed on perovskite-based inverted MOS devices.</p>