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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gomes-Silva, Ana
Universidade Nova de Lisboa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Unraveling the solar and visible light-induced deactivation mechanism of Pt-decorated carbon/TiO2 nanocomposite in photocatalytic hydrogen productioncitations
- 2021Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterizationcitations
- 2021High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cellscitations
- 2020Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3citations
- 2019Rear Optical Reflection and Passivation Using a Nanopatterned Metal/Dielectric Structure in Thin-Film Solar Cellscitations
- 2016Atomically controlled, self-limiting procedures for growth of aluminum oxide on SiC-on-Si
- 2013Amorphous Carbon Coatings: Temperature Effect on Secondary Electron Yield (SEY)
- 2013Study of SEY degradation of amorphous carbon coatings
- 2013Increase of secondary electron yield of amorphous carbon coatings under high vacuum conditionscitations
- 2005Second-harmonic generation studies of C60 multilayer on nickel
Places of action
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article
Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization
Abstract
<p>Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers that can be up-scaled still remains a massive task. Admittance measurements on metal–oxide–semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge carrier transport layer. This work discloses a new pathway for a fundamental characterization of the oxide/semiconductor interface in PSCs. Inverted MOS structures, that is, glass/fluorine-doped tin oxide/tin oxide (SnO<sub>2</sub>)/perovskite are fabricated and characterized allowing to perform a comparative study on the optoelectronic characteristics of the interface between the perovskite and sputtered SnO<sub>2</sub>. Admittance measurements allow to assess the interface fixed oxide charges (Q<sub>f</sub>) and interface traps density (D<sub>it</sub>), which are extremely relevant parameters that define interface properties of extraction layers. It is concluded that a 30 nm thick SnO<sub>2</sub> layer without annealing presents an additional recombination mechanism compared to the other studied layers, and a 20 nm thick SnO<sub>2</sub> layer without annealing presents the highest positive Q<sub>f</sub> values. Thus, an effective method is shown for the characterization of the charge carrier transport layer/perovskite interface using the analysis performed on perovskite-based inverted MOS devices.</p>