| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bonanni, Alberta
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructurescitations
- 2023Ultrafast Coherent THz Lattice Dynamics Coupled to Spins in the van der Waals Antiferromagnet FePS3citations
- 2023Ultrafast coherent THz lattice dynamics coupled to spins in the van der Waals antiferromagnet FePS3citations
- 2022Unusual charge states and lattice sites of Fe in Al x Ga1-x N:Mncitations
- 2022Effect of Impurity Scattering on Percolation of Bosonic Islands and Superconductivity in Fe Implanted NbN Thin Filmscitations
- 2022Ultrafast coherent THz lattice dynamics coupled to spins in the van der Waals antiferromagnet FePS3
- 2021Dilute Magnetic Materialscitations
- 2021Direct-ARPES and STM investigation of FeSe thin film growth by Nd:YAG lasercitations
- 2021Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Lasercitations
- 2019Families of magnetic semiconductors - an overviewcitations
- 2019Crystals / Tuning the size, shape and density of γ′-GayFe4−yN nanocrystals embedded in GaNcitations
- 2019Families of magnetic semiconductors -- an overview
- 2013Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN
- 2012GaMnN epitaxial films with high magnetization
- 2012Manipulating Mn-Mg-k cation complexes to control the charge- and spin-state of Mn in GaNcitations
- 2011Structural and paramagnetic properties of dilute Ga1-xMnxN
- 2011A story of high-temperature ferromagnetism in semiconductors
- 2010Structural and paramagnetic properties of dilute Ga1-xMnxNcitations
- 2010Ohmic contacts to p-GaN using Au/Ni-Mg-O metallizationcitations
- 2010A story of high-temperature ferromagnetism in semiconductorscitations
- 2009Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopycitations
- 2009Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy
- 2007Paramagnetic GaN : Fe and ferromagnetic (Ga,Fe)N: The relationship between structural, electronic, and magnetic propertiescitations
Places of action
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article
Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructures
Abstract
<jats:title>Abstract</jats:title><jats:p>The exchange bias phenomenon, inherent in exchange‐coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structures, offer an ideal platform for exploring exchange bias. However, effectively manipulating exchange bias in van der Waals heterostructures remains challenging. This study investigates the origin of exchange bias in MnPS<jats:sub>3</jats:sub>/Fe<jats:sub>3</jats:sub>GeTe<jats:sub>2</jats:sub> van der Waals heterostructures, demonstrating a method to modulate nearly 1000% variation in magnitude through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS<jats:sub>3</jats:sub>, a substantial 170 mT exchange bias is observed at 5 K, one of the largest observed in van der Waals heterostructures. This significant exchange bias is linked to anomalous weak ferromagnetic ordering in MnPS<jats:sub>3</jats:sub> below 40 K. The tunability of exchange bias during thermal cycling is attributed to the amorphization and changes in the van der Waals gap during field cooling. The findings highlight a robust and adjustable exchange bias in van der Waals heterostructures, presenting a straightforward method to enhance other interface‐related spintronic phenomena for practical applications. Detailed interface analysis reveals atom migration between layers, forming amorphous regions on either side of the van der Waals gap, emphasizing the importance of precise interface characterization in these heterostructures.</jats:p>