| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Denneulin, Thibaud
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Direct observation of altermagnetic band splitting in CrSb thin filmscitations
- 2024Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS 3 /Fe 3 GeTe 2 van der Waals Heterostructurescitations
- 2024Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface
- 2024Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructurescitations
- 2023Current-driven writing process in antiferromagnetic Mn2Au for memory applicationscitations
- 2023Large Interfacial Rashba Interaction Generating Strong Spin–Orbit Torques in Atomically Thin Metallic Heterostructurescitations
- 2023Large interfacial Rashba interaction and resultant dominating field- like torque in atomically thin metallic heterostructurescitations
- 2023Role of heterophase interfaces on local coercivity mechanisms in the magnetic Al0.3CoFeNi complex concentrated alloycitations
- 2021Readout of an antiferromagnetic spintronics system by strong exchange coupling of Mn2Au and Permalloycitations
- 2020Ferroelectric State in an α-Nd 2 WO 6 Polymorph Stabilized in a Thin Filmcitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO 3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2019Structural and chemical investigation of interface related magnetoelectric effect in Ni/BiFe0.95Mn0.05O3 heterostructurescitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2017Lattice reorientation in tetragonal PMN-PT thin film induced by focused ion beam preparation for transmission electron microscopycitations
- 2016Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscopecitations
- 2015HRTEM Studies of Stress Assisted Sintered BaLa4Ti4O15citations
Places of action
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article
Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructures
Abstract
<jats:title>Abstract</jats:title><jats:p>The exchange bias phenomenon, inherent in exchange‐coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structures, offer an ideal platform for exploring exchange bias. However, effectively manipulating exchange bias in van der Waals heterostructures remains challenging. This study investigates the origin of exchange bias in MnPS<jats:sub>3</jats:sub>/Fe<jats:sub>3</jats:sub>GeTe<jats:sub>2</jats:sub> van der Waals heterostructures, demonstrating a method to modulate nearly 1000% variation in magnitude through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS<jats:sub>3</jats:sub>, a substantial 170 mT exchange bias is observed at 5 K, one of the largest observed in van der Waals heterostructures. This significant exchange bias is linked to anomalous weak ferromagnetic ordering in MnPS<jats:sub>3</jats:sub> below 40 K. The tunability of exchange bias during thermal cycling is attributed to the amorphization and changes in the van der Waals gap during field cooling. The findings highlight a robust and adjustable exchange bias in van der Waals heterostructures, presenting a straightforward method to enhance other interface‐related spintronic phenomena for practical applications. Detailed interface analysis reveals atom migration between layers, forming amorphous regions on either side of the van der Waals gap, emphasizing the importance of precise interface characterization in these heterostructures.</jats:p>