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Kovacs, Andras
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Publications (5/5 displayed)
- 2024Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructurescitations
- 2023Numerical Analysis of the Influence of Fabrication Process Uncertainty on Terahertz Metasurface Qualitycitations
- 2017Influence of microstructures on mechanical properties and tribology behaviors of TiN/TiXAl1 − XN multilayer coatings
- 2017Dislocations in AlGaN: core structure, atom segregation, and optical propertiescitations
- 2011Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content
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article
Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructures
Abstract
<jats:title>Abstract</jats:title><jats:p>The exchange bias phenomenon, inherent in exchange‐coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structures, offer an ideal platform for exploring exchange bias. However, effectively manipulating exchange bias in van der Waals heterostructures remains challenging. This study investigates the origin of exchange bias in MnPS<jats:sub>3</jats:sub>/Fe<jats:sub>3</jats:sub>GeTe<jats:sub>2</jats:sub> van der Waals heterostructures, demonstrating a method to modulate nearly 1000% variation in magnitude through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS<jats:sub>3</jats:sub>, a substantial 170 mT exchange bias is observed at 5 K, one of the largest observed in van der Waals heterostructures. This significant exchange bias is linked to anomalous weak ferromagnetic ordering in MnPS<jats:sub>3</jats:sub> below 40 K. The tunability of exchange bias during thermal cycling is attributed to the amorphization and changes in the van der Waals gap during field cooling. The findings highlight a robust and adjustable exchange bias in van der Waals heterostructures, presenting a straightforward method to enhance other interface‐related spintronic phenomena for practical applications. Detailed interface analysis reveals atom migration between layers, forming amorphous regions on either side of the van der Waals gap, emphasizing the importance of precise interface characterization in these heterostructures.</jats:p>