• Wolff, Christian Michael
• Othman, Mostafa
• Steele, Julian A.
• Artuk, Kerem
• Hesslerwyser, Aïcha
• Moon, Soojin
• Jacobs, Daniel A.
• Ballif, Christophe
• Tiwari, Ayodhya N.
• Chin, Xin Yu
• Turkay, Deniz
• Jeangros, Quentin
• Mensi, Mounir D.

Abstract

<jats:title>Abstract</jats:title><jats:p>The primary performance limitation in inverted perovskite‐based solar cells is the interface between the fullerene‐based electron transport layers and the perovskite. Atomic layer deposited thin aluminum oxide (AlO<jats:italic><jats:sub>X</jats:sub></jats:italic>) interlayers that reduce nonradiative recombination at the perovskite/C<jats:sub>60</jats:sub> interface are developed, resulting in &gt;60 millivolts improvement in open‐circuit voltage and 1% absolute improvement in power conversion efficiency. Surface‐sensitive characterizations indicate the presence of a thin, conformally deposited AlO<jats:italic><jats:sub>x</jats:sub></jats:italic> layer, functioning as a passivating contact. These interlayers work universally using different lead‐halide–based absorbers with different compositions where the 1.55 electron volts bandgap single junction devices reach &gt;23% power conversion efficiency. A reduction of metallic Pb<jats:sup>0</jats:sup> is found and the compact layer prevents in‐ and egress of volatile species, synergistically improving the stability. AlO<jats:italic><jats:sub>X</jats:sub></jats:italic>‐modified wide‐bandgap perovskite absorbers as a top cell in a monolithic perovskite–silicon tandem enable a certified power conversion efficiency of 29.9% and open‐circuit voltages above 1.92 volts for 1.17 square centimeters device area.</jats:p>

Topics

• perovskite
• impedance spectroscopy
• surface
• aluminum oxide
• aluminium
• Silicon
• power conversion efficiency