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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Turkay, Deniz
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2024Pizza oven processing of organohalide perovskites (POPOP): a simple, versatile and efficient vapor deposition methodcitations
- 2024A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite–Silicon Tandemscitations
- 2024A universal perovskite/C60 interface modification via atomic layer deposited aluminum oxide for perovskite solar cells and perovskite–silicon tandemscitations
- 2023Interface passivation for 31.25%-efficient perovskite/silicon tandem solar cellscitations
- 2018Photovoltaic performance of CdS/CdTe junctions on ZnO nanorod arrayscitations
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article
A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite–Silicon Tandems
Abstract
<jats:title>Abstract</jats:title><jats:p>The primary performance limitation in inverted perovskite‐based solar cells is the interface between the fullerene‐based electron transport layers and the perovskite. Atomic layer deposited thin aluminum oxide (AlO<jats:italic><jats:sub>X</jats:sub></jats:italic>) interlayers that reduce nonradiative recombination at the perovskite/C<jats:sub>60</jats:sub> interface are developed, resulting in >60 millivolts improvement in open‐circuit voltage and 1% absolute improvement in power conversion efficiency. Surface‐sensitive characterizations indicate the presence of a thin, conformally deposited AlO<jats:italic><jats:sub>x</jats:sub></jats:italic> layer, functioning as a passivating contact. These interlayers work universally using different lead‐halide–based absorbers with different compositions where the 1.55 electron volts bandgap single junction devices reach >23% power conversion efficiency. A reduction of metallic Pb<jats:sup>0</jats:sup> is found and the compact layer prevents in‐ and egress of volatile species, synergistically improving the stability. AlO<jats:italic><jats:sub>X</jats:sub></jats:italic>‐modified wide‐bandgap perovskite absorbers as a top cell in a monolithic perovskite–silicon tandem enable a certified power conversion efficiency of 29.9% and open‐circuit voltages above 1.92 volts for 1.17 square centimeters device area.</jats:p>