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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Novoselov, Kostya S.
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Topics
Publications (26/26 displayed)
- 2024Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayerscitations
- 2024Wandering principal optical axes in van der Waals triclinic materialscitations
- 2024Resonant Band Hybridization in Alloyed Transition Metal Dichalcogenide Heterobilayers.
- 2024DNA‐rGO Aerogel Bioanodes with Microcompartmentalization for High‐Performance Bioelectrochemical Systemscitations
- 20233D Printed Carbon Framework with the Graphene Aerogel for Microbial Fuel Cell Application
- 2021Sustainable and multifunctional composites of graphene‐based natural jute fiberscitations
- 2020Highly conductive, scalable, and machine washable graphene-based e-textiles for multifunctional wearable electronic applicationscitations
- 2020Emergence of Highly Linearly Polarized Interlayer Exciton Emission in MoSe2/WSe2 Heterobilayers with Transfer-Induced Layer Corrugationcitations
- 2020Emergence of Highly Linearly Polarized Interlayer Exciton Emission in MoSe 2 /WSe 2 Heterobilayers with Transfer-Induced Layer Corrugationcitations
- 2020Highly Conductive, Scalable and Machine Washable Graphene-Based E-Textiles for Multifunctional Wearable Electronic Applicationscitations
- 2019Ultrahigh performance of nanoengineered graphene-based natural jute fiber compositescitations
- 2019Ultra-high performance of nano-engineered graphene-based natural jute fiber compositescitations
- 2018High Performance Graphene-Based Natural Fibre Compositescitations
- 2018Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructurescitations
- 2018High-performance graphene-based natural fiber compositescitations
- 2018Mechanism of Gold-Assisted Exfoliation of Centimeter-Sized Transition-Metal Dichalcogenide Monolayerscitations
- 2018Growth of graphene on tantalum and its protective propertiescitations
- 2017Observing imperfection in atomic interfaces for van der Waals heterostructurescitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2015Deformation of Wrinkled Graphenecitations
- 2013Reversible loss of bernal stacking during the deformation of few-layer graphene in nanocompositescitations
- 2012Optimizing the reinforcement of polymer-based nanocomposites by graphenecitations
- 2011Strain mapping in a graphene monolayer nanocompositecitations
- 2011Development of a universal stress sensor for graphene and carbon fibrescitations
- 2010Interfacial stress transfer in a graphene monolayer nanocompositecitations
- 2007Breakdown of the adiabatic Born-Oppenheimer approximation in graphenecitations
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article
Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers
Abstract
Bandstructure engineering using alloying is widely utilized for achieving optimized performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, heterobilayers made from monolayers of WSe2 (or MoSe2) and MoxW1 − xSe2 alloy are fabricated and nontrivial tuning of the resultant bandstructure is observed as a function of concentration x. This evolution is monitored by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In MoxW1 − xSe2/WSe2, a strong IX energy shift of ≈100 meV is observed for x varied from 1 to 0.6. However, for x < 0.6 this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe2. This observation is theoretically interpreted as the strong variation of the conduction band K valley for x > 0.6, with IX PL arising from the K − K transition, while for x < 0.6, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K − Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. This work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.