| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vergnaud, Céline
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2024Precision defect integrated graphene as reliable support membrane for high-resolution cryo-transmission electron microscopy
- 2024Two-dimensional to bulk crossover of the WSe2 electronic band structure
- 2022Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Control of spin–charge conversion in van der Waals heterostructurescitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Sicitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Sicitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2017Imaging spin diffusion in germanium at room temperaturecitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2012Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Bandcitations
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article
Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emission
Abstract
<jats:title>Abstract</jats:title><jats:p>2D materials, such as transition metal dichalcogenides, are ideal platforms for spin‐to‐charge conversion (SCC) as they possess strong spin–orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe<jats:sub>2</jats:sub> by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as‐grown PtSe<jats:sub>2</jats:sub> layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe<jats:sub>2</jats:sub> unaffected, resulting in well‐defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness‐dependent electronic structure of PtSe<jats:sub>2</jats:sub> allows the control of SCC. Indeed, the transition from the inverse Rashba–Edelstein effect (IREE) in 1–3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe<jats:sub>2</jats:sub> enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe<jats:sub>2</jats:sub> an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.</jats:p>