| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jaffrès, Henri
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2024Large chiral orbital texture and orbital Edelstein effect in Co/Al heterostructurecitations
- 2024Controlling the helicity of light by electrical magnetization switchingcitations
- 2023Large Interfacial Rashba Interaction Generating Strong Spin–Orbit Torques in Atomically Thin Metallic Heterostructurescitations
- 2023Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin–phonon interactionscitations
- 2021Spin injection efficiency at metallic interfaces probed by THz emission spectroscopycitations
- 2020Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopycitations
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2016Spin Hall effect in AuW alloys
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
Places of action
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article
Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emission
Abstract
<jats:title>Abstract</jats:title><jats:p>2D materials, such as transition metal dichalcogenides, are ideal platforms for spin‐to‐charge conversion (SCC) as they possess strong spin–orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe<jats:sub>2</jats:sub> by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as‐grown PtSe<jats:sub>2</jats:sub> layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe<jats:sub>2</jats:sub> unaffected, resulting in well‐defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness‐dependent electronic structure of PtSe<jats:sub>2</jats:sub> allows the control of SCC. Indeed, the transition from the inverse Rashba–Edelstein effect (IREE) in 1–3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe<jats:sub>2</jats:sub> enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe<jats:sub>2</jats:sub> an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.</jats:p>