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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chshiev, Mairbek
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2024Large chiral orbital texture and orbital Edelstein effect in Co/Al heterostructurecitations
- 2023From Early Theories of Dzyaloshinskii–Moriya Interactions in Metallic Systems to Today’s Novel Roadscitations
- 2020Low‐Energy Spin Precession in the Molecular Field of a Magnetic Thin Filmcitations
- 2018Significant Dzyaloshinskii–Moriya interaction at graphene–ferromagnet interfaces due to the Rashba effectcitations
- 2018Large-Voltage Tuning of Dzyaloshinskii–Moriya Interactions: A Route toward Dynamic Control of Skyrmion Chiralitycitations
- 2018Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Atomic-Layer Stacking, Insulator Capping and Electric Fieldcitations
- 2017Tailoring magnetic insulator proximity effects in graphene : First-principles calculations
- 2017Modeling anisotropic magnetoresistance in layered antiferromagnetscitations
- 2017Tailoring magnetic insulator proximity effects in graphene: first-principles calculationscitations
- 2016Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt−Graphene Heterostructurescitations
- 2016Direct evidence for minority spin gap in the Co 2 MnSi Heusler compoundcitations
- 2015Graphene spintronics:The European Flagship perspectivecitations
- 2015Graphene spintronics: the European Flagship perspective
- 2015Graphene spintronics: the European Flagship perspectivecitations
- 2015Graphene spintronicscitations
- 2013Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barrierscitations
- 2012Air-Protected Epitaxial Graphene/Ferromagnet Hybrids Prepared by Chemical Vapor Deposition and Intercalationcitations
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article
Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emission
Abstract
<jats:title>Abstract</jats:title><jats:p>2D materials, such as transition metal dichalcogenides, are ideal platforms for spin‐to‐charge conversion (SCC) as they possess strong spin–orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe<jats:sub>2</jats:sub> by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as‐grown PtSe<jats:sub>2</jats:sub> layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe<jats:sub>2</jats:sub> unaffected, resulting in well‐defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness‐dependent electronic structure of PtSe<jats:sub>2</jats:sub> allows the control of SCC. Indeed, the transition from the inverse Rashba–Edelstein effect (IREE) in 1–3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe<jats:sub>2</jats:sub> enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe<jats:sub>2</jats:sub> an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.</jats:p>