• Chen, Qian
• Fons, Paul
• Ando, Daisuke
• Hatayama, Shogo
• Kim, Mihyeon
• Kubo, Momoji
• Wang, Yinli
• Shuang, Yi
• Sutou, Yuji
• Saito, Yuta

Abstract

<jats:title>Abstract</jats:title><jats:p>2D van der Waals (vdW) transition metal di‐chalcogenides (TMDs) have garnered significant attention in the nonvolatile memory field for their tunable electrical properties, scalability, and potential for phase engineering. However, their complex switching mechanism and complicated fabrication methods pose challenges for mass production. Sputtering is a promising technique for large‐area 2D vdW TMD fabrication, but the high melting point (typically <jats:italic>T</jats:italic><jats:sub>m</jats:sub> &gt; 1000 °C) of TMDs requires elevated temperatures for good crystallinity. This study focuses on the low‐<jats:italic>T</jats:italic><jats:sub>m</jats:sub> 2D vdW TM tetra‐chalcogenides and identifies NbTe<jats:sub>4</jats:sub> as a promising candidate with an ultra‐low <jats:italic>T</jats:italic><jats:sub>m</jats:sub> of around 447 °C (onset temperature). As‐grown NbTe<jats:sub>4</jats:sub> forms an amorphous phase upon deposition that can be crystallized by annealing at temperatures above 272 °C. The simultaneous presence of a low <jats:italic>T</jats:italic><jats:sub>m</jats:sub> and a high crystallization temperature <jats:italic>T</jats:italic><jats:sub>c</jats:sub> can resolve important issues facing current phase‐change memory compounds, such as high Reset energies and poor thermal stability of the amorphous phase. Therefore, NbTe<jats:sub>4</jats:sub> holds great promise as a potential solution to these issues.</jats:p>

Topics

• Deposition
• impedance spectroscopy
• compound
• amorphous
• phase
• annealing
• crystallization
• crystallinity
• crystallization temperature