| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Santamaria, Jacobo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2023Reversible metal-insulator transition in SrIrO3 ultrathin layers by field effect control of inversion symmetry breakingcitations
- 2023Unconventional long range triplet proximity effect in planar YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>/La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> Josephson junctionscitations
- 2023Large Magnetoresistance of Isolated Domain Walls in La<sub>2/3</sub>Sr<sub>1/3</sub>MnO<sub>3</sub> Nanowirescitations
- 2023Large Magnetoresistance of Isolated Domain Walls in La 2/3 Sr 1/3 MnO 3 Nanowirescitations
- 2023A 2D ferroelectric vortex lattice in twisted BaTiO3 freestanding layers
- 2017Large Anisotropic Magnetoresistance in La 0.7 Sr 0.3 MnO 3 Films at Room Temperaturecitations
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article
Large Magnetoresistance of Isolated Domain Walls in La<sub>2/3</sub>Sr<sub>1/3</sub>MnO<sub>3</sub> Nanowires
Abstract
<jats:title>Abstract</jats:title><jats:p>Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half‐metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La<jats:sub>1−</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic>Sr<jats:italic><jats:sub>x</jats:sub></jats:italic>MnO<jats:sub>3</jats:sub> (LSMO) manganites are considered as promising candidates for their robust half‐metallic ground state, Curie temperature above room temperature (<jats:italic>T</jats:italic><jats:sub>c</jats:sub> = 360 K, for <jats:italic>x</jats:italic> = 1/3), and chemical stability. Yet domain wall magnetoresistance is poorly understood, with large discrepancies in the reported values and conflicting interpretation of experimental data due to the entanglement of various source of magnetoresistance, namely, spin accumulation, anisotropic magnetoresistance, and colossal magnetoresistance. In this work, the domain wall magnetoresistance is measured in LSMO cross‐shape nanowires with single‐domain walls nucleated across the current path. Magnetoresistance values above 10% are found to be originating at the spin accumulation caused by the mistracking effect of the spin texture of the domain wall by the conduction electrons. Fundamentally, this result shows the importance on non‐adiabatic processes at spin textures despite the strong Hund coupling to the localized t<jats:sub>2g</jats:sub> electrons of the manganite. These large magnetoresistance values are high enough for encoding and reading magnetic bits in future oxide spintronic sensors.</jats:p>