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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Valenzuela, Sergio O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2022Passivation of Bi2Te3 topological insulator by transferred CVD-graphene : toward intermixing-free interfacescitations
- 2022Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayercitations
- 2022Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayer
- 2022Passivation of Bi<sub>2</sub>Te<sub>3</sub> Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfacescitations
- 2022Unraveling heat transport and dissipation in suspended MoSe2 from bulk to monolayercitations
- 2022Room-temperature charge to spin interconversion in proximitized graphene
- 2021Large-area van der Waals epitaxy and magnetic characterization of Fe3GeTe2 films on graphenecitations
- 2021Control of spin-charge conversion in van der Waals heterostructurescitations
- 2021Low-symmetry topological materials for large charge-to-spin interconversion : the case of transition metal dichalcogenide monolayerscitations
- 2021Large-area van der Waals epitaxy and magnetic characterization of Fe3GeTe2films on graphene
- 2018Impact of the in situ rise in hydrogen partial pressure on graphene shape evolution during CVD growth of graphenecitations
- 2018Impact of the in situ rise in hydrogen partial pressure on graphene shape evolution during CVD growth of graphenecitations
- 2017Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111)citations
- 2017Measurement of spin-orbit torques from Rashba and topological surface states
- 2015Graphene spintronics:The European Flagship perspectivecitations
- 2015Graphene spintronics: the European Flagship perspective
- 2015Graphene spintronics: the European Flagship perspectivecitations
- 2015Graphene spintronicscitations
- 2014Thermal energy harvestingcitations
Places of action
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article
Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayer
Abstract
<p>Understanding heat flow in layered transition metal dichalcogenide (TMD) crystals is crucial for applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood, in particular how transport is affected by material thickness and the material's environment. This combined experimental–theoretical study establishes a unifying physical picture of the intrinsic lattice thermal conductivity of the representative TMD MoSe<sub>2</sub>. Thermal conductivity measurements using Raman thermometry on a large set of clean, crystalline, suspended crystals with systematically varied thickness are combined with ab initio simulations with phonons at finite temperature. The results show that phonon dispersions and lifetimes change strongly with thickness, yet the thinnest TMD films exhibit an in-plane thermal conductivity that is only marginally smaller than that of bulk crystals. This is the result of compensating phonon contributions, in particular heat-carrying modes around ≈0.1 THz in (sub)nanometer thin films, with a surprisingly long mean free path of several micrometers. This behavior arises directly from the layered nature of the material. Furthermore, out-of-plane heat dissipation to air molecules is remarkably efficient, in particular for the thinnest crystals, increasing the apparent thermal conductivity of monolayer MoSe<sub>2</sub> by an order of magnitude. These results are crucial for the design of (flexible) TMD-based (opto-)electronic applications.</p>