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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Attané, Jean-Philippe
Université Grenoble Alpes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Ferroelectric spin orbit devices for ultralow power computing
- 2023Electrical characterization of the azimuthal anisotropy of $(mathrm{Ni}_xmathrm{Co}_{1-x})mathrm{B}$-based ferromagnetic nanotubescitations
- 2022Anisotropic magnetoresistance in Mn 4− x Ni x N and the change in the crystalline fieldcitations
- 2021Spin–Charge Interconversion in KTaO 3 2D Electron Gasescitations
- 2021Spin–Charge Interconversion in KTaO3 2D Electron Gasescitations
- 2021Room-temperature ferroelectric switching of spin-to-charge conversion in GeTecitations
- 2020Switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO 3citations
- 2019Magnetic and magneto-transport properties of Mn4N thin films by Ni substitution and their possibility of magnetic compensationcitations
- 2018Calculation method of spin accumulations and spin signals in nanostructures using spin resistorscitations
- 2017Geometrical control of pure spin current induced domain wall depinning
- 2016Spin Hall effect in AuW alloys
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2010Effect of crystalline defects on domain wall motion under field and current in nanowires with perpendicular magnetization.citations
Places of action
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article
Spin–Charge Interconversion in KTaO3 2D Electron Gases
Abstract
<jats:title>Abstract</jats:title><jats:p>Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non‐reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO<jats:sub>3</jats:sub> (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, the observation of both the DEE and IEE in a new interfacial two‐dimensional electron gas (2DEG) based on the perovskite oxide KTaO<jats:sub>3</jats:sub> is reported. 2DEGs are generated by the simple deposition of Al metal onto KTaO<jats:sub>3</jats:sub> single crystals, characterized by angle‐resolved photoemission spectroscopy and magnetotransport, and shown to display the DEE through unidirectional magnetoresistance and the IEE by spin‐pumping experiments. Their spin–charge interconversion efficiency is then compared with that of STO‐based interfaces, related to the 2DEG electronic structure, and perspectives are given for the implementation of KTaO<jats:sub>3</jats:sub> 2DEGs into spin–orbitronic devices is compared.</jats:p>