| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shin, Hyeon-Jin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022A 200 x 256 Image Sensor Heterogeneously Integrating a 2D Nanomaterial-Based Photo-FET Array and CMOS Time-to-Digital Converterscitations
- 2020Ultralow-dielectric-constant amorphous boron nitridecitations
- 2020High-Throughput Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripeningcitations
- 2020Graphene-Based Etch Resist for Semiconductor Device Fabricationcitations
- 2019Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mVcitations
- 2019Effect of encapsulation on electronic transport properties of nanoscale Cu(111) filmscitations
- 2018High-Performance Triboelectric Nanogenerators Based on Electrospun Polyvinylidene Fluoride-Silver Nanowire Composite Nanofiberscitations
- 2018Barrier height control in metal/silicon contacts with atomically thin MoS2 and WS2 interfacial layerscitations
- 2018Fabrication of Metal/Graphene Hybrid Interconnects by Direct Graphene Growth and Their Integration Propertiescitations
- 2014Designed Three-Dimensional Freestanding Single-Crystal Carbon Architecturescitations
- 2008Hierarchical organization of Au nanoparticles in a poly(vinyl carbazole) matrix for hybrid electronic devicescitations
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article
High-Throughput Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening
Abstract
For practical device applications, monolayer transition metal dichalcogenide (TMD) films must meet key industry needs for batch processing, including the high-throughput, large-scale production of high-quality, spatially uniform materials, and reliable integration into devices. Here, high-throughput growth, completed in 12 min, of 6-inch wafer-scale monolayer MoS(2)and WS(2)is reported, which is directly compatible with scalable batch processing and device integration. Specifically, a pulsed metal-organic chemical vapor deposition process is developed, where periodic interruption of the precursor supply drives vertical Ostwald ripening, which prevents secondary nucleation despite high precursor concentrations. The as-grown TMD films show excellent spatial homogeneity and well-stitched grain boundaries, enabling facile transfer to various target substrates without degradation. Using these films, batch fabrication of high-performance field-effect transistor (FET) arrays in wafer-scale is demonstrated, and the FETs show remarkable uniformity. The high-throughput production and wafer-scale automatable transfer will facilitate the integration of TMDs into Si-complementary metal-oxide-semiconductor platforms.