| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Paulus, Fabian
Leibniz Institute for Solid State and Materials Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Halide Segregated Crystallization of Mixed-Halide Perovskites Revealed by In Situ GIWAXScitations
- 2023Solvent-antisolvent interactions in metal halide perovskites
- 2023Elucidating Structure Formation in Highly Oriented Triple Cation Perovskite Filmscitations
- 2021Ruddlesden-Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistorscitations
- 2019The effect of side-chain length on the microstructure and processing window of zone-cast naphthalene-based bispentalenescitations
- 2016N-Heteroacenes in Organic Field-Effect Transistors
- 2016The effect of tuning the microstructure of TIPS-tetraazapentacene on the performance of solution processed thin film transistorscitations
- 2015Reverse Engineering of Conjugated Microporous Polymers: Defect Structures of Tetrakis(4‐ethynylphenyl)stannane Networkscitations
Places of action
| Organizations | Location | People |
|---|
article
Ruddlesden-Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors
Abstract
International audience ; Controlling the morphology of metal halide perovskite layers during processing is critical for the manufacturing of optoelectronics. Here, a strategy to control the microstructure of solution-processed layered Ruddlesden-Popper-phase perovskite films based on phenethylammonium lead bromide ((PEA)(2) PbBr(4) ) is reported. The method relies on the addition of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C(8) -BTBT) into the perovskite formulation, where it facilitates the formation of large, near-single-crystalline-quality platelet-like (PEA)(2) PbBr(4) domains overlaid by a ≈5-nm-thin C(8) -BTBT layer. Transistors with (PEA)(2) PbBr(4) /C(8) -BTBT channels exhibit an unexpectedly large hysteresis window between forward and return bias sweeps. Material and device analysis combined with theoretical calculations suggest that the C(8) -BTBT-rich phase acts as the hole-transporting channel, while the quantum wells in (PEA)(2) PbBr(4) act as the charge storage element where carriers from the channel are injected, stored, or extracted via tunneling. When tested as a non-volatile memory, the devices exhibit a record memory window (>180 V), a high erase/write channel current ratio (10(4) ), good data retention, and high endurance (>10(4) cycles). The results here highlight a new memory device concept for application in large-area electronics, while the growth technique can potentially be exploited for the development of other optoelectronic devices including solar cells, photodetectors, and light-emitting diodes.