| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Fiordaliso, Elisabetta Maria
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.
- 2021Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performancecitations
- 2020Effect of Cold Sintering Process (CSP) on the Electro-Chemo-Mechanical Properties of Gd-doped Ceria (GDC)citations
- 2020Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybridscitations
- 2019Evolution of intermetallic GaPd2/SiO2 catalyst and optimization for methanol synthesis at ambient pressurecitations
- 2015Intermetallic GaPd2 Nanoparticles on SiO2 for Low-Pressure CO2 Hydrogenation to Methanolcitations
- 2015Intermetallic GaPd 2 Nanoparticles on SiO 2 for Low-Pressure CO 2 Hydrogenation to Methanol:Catalytic Performance and In Situ Characterizationcitations
- 2012H2 splitting on Pt, Ru and Rh nanoparticles supported on sputtered HOPGcitations
- 2012Size dependent reactivity of metal nanoparticles and alloys supported on HOPG, probed by the H-D exchange and the NH3 decomposition reactions
- 2012Strong Metal Support Interaction of Pt and Ru Nanoparticles Deposited on HOPG Probed by the H-D Exchange Reactioncitations
- 2011H2-splitting on Pt/Ru alloys supported on sputtered HOPGcitations
Places of action
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article
Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids
Abstract
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. This work introduces a crystal growth platform-based on 3D structuring of growth substrates-which enables synthesis of semiconductor nanowire hybrids with in situ patterned superconductor shells. The platform eliminates the need for etching, thereby enabling full freedom in the choice of hybrid constituents. All of the most frequently used superconducting hybrid device architectures are realized and characterized. These devices exhibit increased yield and electrostatic stability compared to etched devices, and evidence of ballistic superconductivity is observed. In addition to aluminum, hybrid structures based on tantalum, niobium, and vanadium are presented.