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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bahramy, Mohammad Saeed
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Hidden spin-orbital texture at the Γ ¯ -located valence band maximum of a transition metal dichalcogenide semiconductorcitations
- 2020Anisotropic Quantum Transport through a Single Spin Channel in the Magnetic Semiconductor EuTiO3citations
- 2020Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indiumcitations
- 2017Bulk Rashba Semiconductors and Related Quantum Phenomena.citations
- 2015Rich structural phase diagram and thermoelectric properties of layered tellurides Mo1-xNbxTe2citations
- 2012Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splittingcitations
- 2012Epitaxially Stabilized EuMoO3citations
- 2011Giant Rashba-type spin splitting in bulk BiTeIcitations
- 2008Magnetic phase stability and spin-dependent transport in ${mathrm{CeNi}}_{4}M$ ($M=mathrm{Sc}$, Ti, V, Cr, Mn, Fe, and Co)citations
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article
Anisotropic Quantum Transport through a Single Spin Channel in the Magnetic Semiconductor EuTiO3
Abstract
Magnetic semiconductors are a vital component in the understanding of quantum transport phenomena. To explore such delicate, yet fundamentally important, effects, it is crucial to maintain a high carrier mobility in the presence of magnetic moments. In practice, however, magnetization often diminishes the carrier mobility. Here, it is shown that EuTiO3 is a rare example of a magnetic semiconductor that can be desirably grown using the molecular beam epitaxy to possess a high carrier mobility exceeding 3000 cm2 V−1 s−1 at 2 K, while intrinsically hosting a large magnetization value, 7 μB per formula unit. This is demonstrated by measuring the Shubnikov–de Haas (SdH) oscillations in the ferromagnetic state of EuTiO3 films with various carrier densities. Using first-principles calculations, it is shown that the observed SdH oscillations originate genuinely from Ti 3d-t2g states which are fully spin-polarized due to their energetical proximity to the in-gap Eu 4f bands. Such an exchange coupling is further shown to have a profound effect on the effective mass and fermiology of the Ti 3d-t2g electrons, manifested by a directional anisotropy in the SdH oscillations. These findings suggest that EuTiO3 film is an ideal magnetic semiconductor, offering a fertile field to explore quantum phenomena suitable for spintronic applications.