| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jugovac, Matteo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2023Giant and Tunable Out-of-Plane Spin Polarization of Topological Antimonenecitations
- 2023Enhancing electron correlation at a 3D ferromagnetic surfacecitations
- 2023Observation of termination-dependent topological connectivity in a magnetic Weyl kagome-latticecitations
- 2023Observation of Termination-Dependent Topological Connectivity in a Magnetic Weyl Kagome Latticecitations
- 2023Observation of termination-dependent topological connectivity in a magnetic Weyl Kagome latticecitations
- 2022All-optical spin injection in silicon investigated by element-specific time-resolved Kerr effectcitations
- 2022Enhancing electron correlation at a 3d ferromagnetic surfacecitations
- 2021Room-temperature on-spin-switching and tuning in a porphyrin-based multifunctional interface
- 2021Room‐Temperature On‐Spin‐Switching and Tuning in a Porphyrin‐Based Multifunctional Interfacecitations
- 2020Operando atomic-scale study of graphene CVD growth at steps of polycrystalline nickelcitations
- 2020Morphology and electronic structure of graphene supported by metallic thin films
- 2019Combined orbital tomography study of multi-configurational molecular adsorbate systemscitations
- 2019Combined orbital tomography study of multi-configurational molecular adsorbate systems
- 2019Topotactic Phase Transition Driving Memristive Behaviorcitations
- 2018Graphene on nickel (100) micrograins: Modulating the interface interaction by extended moiré superstructurescitations
Places of action
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article
Topotactic Phase Transition Driving Memristive Behavior
Abstract
Redox‐based memristive devices are one of the most attractive candidates for future nonvolatile memory applications and neuromorphic circuits, and their performance is determined by redox processes and the corresponding oxygen‐ion dynamics. In this regard, brownmillerite SrFeO2.5 has been recently introduced as a novel material platform due to its exceptional oxygen‐ion transport properties for resistive‐switching memory devices. However, the underlying redox processes that give rise to resistive switching remain poorly understood. By using X‐ray absorption spectromicroscopy, it is demonstrated that the reversible redox‐based topotactic phase transition between the insulating brownmillerite phase, SrFeO2.5, and the conductive perovskite phase, SrFeO3, gives rise to the resistive‐switching properties of SrFeOx memristive devices. Furthermore, it is found that the electric‐field‐induced phase transition spreads over a large area in (001) oriented SrFeO2.5 devices, where oxygen vacancy channels are ordered along the in‐plane direction of the device. In contrast, (111)‐grown SrFeO2.5 devices with out‐of‐plane oriented oxygen vacancy channels, reaching from the bottom to the top electrode, show a localized phase transition. These findings provide detailed insight into the resistive‐switching mechanism in SrFeOx‐based memristive devices within the framework of metal–insulator topotactic phase transitions.