| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Anthopoulos, Thomas D.
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (33/33 displayed)
- 2024Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curingcitations
- 2024A novel selenophene based non-fullerene acceptor for near-infrared organic photodetectors with ultra-low dark currentcitations
- 2024Enhancing the Electrical Conductivity and Long‐Term Stability of PEDOT:PSS Electrodes through Sequential Treatment with Nitric Acid and Cesium Chloridecitations
- 2023Design and Piezoelectric Energy Harvesting Properties of a Ferroelectric Cyclophosphazene Saltcitations
- 2023Advances in Organometallic Perovskites Enabled Radiation Detection Technologies
- 2023A 19% efficient and stable organic photovoltaic device enabled by a guest nonfullerene acceptor with fibril-like morphologycitations
- 2023Neuromorphic computing based on halide perovskitescitations
- 2023Wirelessly powered large-area electronics for the Internet of Thingscitations
- 2023Understanding the Degradation of Methylenediammonium and Its Role in Phase-Stabilizing Formamidinium Lead Triiodidecitations
- 2022Efficient Piezoelectric Energy Harvesting from a Discrete Hybrid Bismuth Bromide Ferroelectric Templated by Phosphonium Cationcitations
- 2022Infrared Organic Photodetectors Employing Ultralow Bandgap Polymer and Non‐Fullerene Acceptors for Biometric Monitoringcitations
- 2022Oligoethylene Glycol Side Chains Increase Charge Generation in Organic Semiconductor Nanoparticles for Enhanced Photocatalytic Hydrogen Evolutioncitations
- 2022High‐Efficiency Perovskite–Organic Blend Light‐Emitting Diodes Featuring Self‐Assembled Monolayers as Hole‐Injecting Interlayerscitations
- 2021Amphipathic Side Chain of a Conjugated Polymer Optimizes Dopant Location toward Efficient N-Type Organic Thermoelectricscitations
- 2021Amphipathic Side Chain of a Conjugated Polymer Optimizes Dopant Location toward Efficient N-Type Organic Thermoelectricscitations
- 2021Ternary organic photodetectors based on pseudo-binaries nonfullerene-based acceptorscitations
- 2021Ruddlesden-Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistorscitations
- 2020N-type organic thermoelectrics:demonstration of ZT > 0.3citations
- 2020Metal Halide Perovskites for High‐Energy Radiation Detectioncitations
- 2020Novel wide-bandgap non-fullerene acceptors for efficient tandem organic solar cellscitations
- 2020N-type organic thermoelectricscitations
- 2019High responsivity and response speed single-layer mixed-cation lead mixed-halide perovskite photodetectors based on nanogap electrodes manufactured on large-area rigid and flexible substratescitations
- 2019High throughput fabrication of nanoscale optoelectronic devices on large area flexible substrates using adhesion lithography
- 2018Charge Photogeneration and Recombination in Mesostructured CuSCN‐Nanowire/PC<sub>70</sub>BM Solar Cellscitations
- 2018p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cellscitations
- 2018High‐Efficiency Fullerene Solar Cells Enabled by a Spontaneously Formed Mesostructured CuSCN‐Nanowire Heterointerfacecitations
- 2017Deep ultraviolet copper(I) thiocyanate (CuSCN) photodetectors based on coplanar nanogap electrodes fabricated via adhesion lithographycitations
- 2016Vinylene-Linked Oligothiophene-Difluorobenzothiadiazole Copolymer for Transistor Applicationscitations
- 2015An air-stable DPP-thieno-TTF copolymer for single-material solar cell devices and field effect transistorscitations
- 2013BPTs: Thiophene-flanked benzodipyrrolidone conjugated polymers for ambipolar organic transistorscitations
- 2011Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistorscitations
- 2008Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectricscitations
- 2008Solution Processed Self-Assembled Monolayer Gate Dielectrics for Low-Voltage Organic Transistorscitations
Places of action
| Organizations | Location | People |
|---|
article
Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing
Abstract
<jats:title>Abstract</jats:title><jats:p>Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in emerging transparent and flexible microelectronics. Unfortunately, their performance is hindered by limitations associated with parasitic effects, such as parasitic electrode overlap capacitances and high contact resistance, which can severely limit their dynamic behavior. Here, an innovative method is reported to fabricate coplanar self‐aligned‐gate (SAG) indium‐gallium‐zinc‐oxide (IGZO) transistors with engineered source/drain contacts. The manufacturing process starts with the deposition and patterning of a gate electrode/dielectric stack and its functionalization with an organic self‐assembled monolayer (SAM) as the surface energy modifier. A second gold (Au) electrode is subsequently deposited over the gate electrode stack. The overlapping region between the two electrodes is removed via self‐delamination under mild sonication, forming perfectly aligned coplanar Au‐Gate‐Au electrodes. Device fabrication is completed with the spin coating of the IGZO precursor, followed by rapid photonic curing. Replacing the gold source/drain contact with bimetallic electrodes such as Au/In and Au/ITO enables a reduction in contact resistance and improves the transistor performance remarkably without increasing manufacturing complexity. The method is highly scalable, robust, and applicable to other semiconductor materials.</jats:p>