• Kooi, Bart Jan
• Banerjee, Tamalika
• Van Rijn, Job
• Ahmadi, Majid
• Bhaduri, Ishitro
• Noheda, Beatriz

Abstract

<p>Domains and domain wall engineering have been extensively explored in ferroic materials for a wide range of applications in nanoelectronics and spintronics. Complex oxides exhibiting strongly correlated properties are model platforms for such studies where response to strain or external stimuli such as electric field, temperature and light can be probed. Here, domains in strained SrMnO₃ films, grown on a degenerate semiconductor, allowing for conduction in an out-of-plane geometry, are studied using a combination of microscopy probes. Using conductive atomic force microscopy, electrically isolated domains with varying conductance are found and their temporal evolution is investigated. Further, their formation and microstructure are studied using scanning transmission electron microscopy and secondary electron contrast in scanning electron microscopy. An important contribution is establishing that the observed domains are formed by cracks, driven by inhomogeneous strain relaxation throughout the film, resulting in significantly high strain planes. The potential of secondary electrons to detect domain dependent contrast over a large area, ensuing due to the use of a degenerate semiconductor correlates with the conductive properties of the domains and serves as a new direction to probe domains and domain walls in ferroic materials.</p>

Topics

• impedance spectroscopy
• microstructure
• scanning electron microscopy
• thin film
• atomic force microscopy
• semiconductor
• crack
• transmission electron microscopy