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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Graham, Samuel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024MAX Phase Ti<sub>2</sub>AlN for HfO<sub>2</sub> Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratiocitations
- 2021Geomechanical characterisation of organic-rich calcareous shale using AFM and nanoindentationcitations
- 2020Diamond Seed Size and the Impact on Chemical Vapor Deposition Diamond Thin Film Propertiescitations
- 2019The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTscitations
- 2018Transient Liquid Phase Bonding of AlN to AlSiC for Durable Power Electronic Packagescitations
- 2016Spectroscopy and control of near-surface defects in conductive thin film ZnOcitations
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article
MAX Phase Ti<sub>2</sub>AlN for HfO<sub>2</sub> Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio
Abstract
<jats:title>Abstract</jats:title><jats:p>A Ti<jats:sub>2</jats:sub>AlN MAX phase layered thin film electrode and oxygen getter layer for HfO<jats:sub>2</jats:sub>‐based two‐terminal memristors is presented. The Ti<jats:sub>2</jats:sub>AlN/HfO<jats:sub>x</jats:sub>/Ti memristor devices exhibit enhanced resistive switching performance, including an ultra‐low reset current density (< 10<jats:sup>−8</jats:sup> M<jats:bold>Ω</jats:bold> cm<jats:sup>2</jats:sup>), substantial on‐off ratio (≈ 6000), excellent multi‐level functionality (≈ 9 distinct states), impressive retention (up to 300 °C), and robust endurance (>200 million) as compared to conventional TiN and other alternative materials based memristors. Experimental measurements and modeling suggest that the distinctive combination of low thermal conductivity, high electrical conductivity, and unique ultra‐thin layer‐by‐layer structure of the Ti<jats:sub>2</jats:sub>AlN MAX phase thin film contribute to this exceptional performance with good reproducibility and stability. The results demonstrate for the first‐time the potential of this innovative sputtered MAX phase material for engineering energy‐efficient, high‐density non‐volatile digital, and analog memory devices aimed toward next‐generation sustainable artificial intelligence.</jats:p>