| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Butterling, Maik
Helmholtz-Zentrum Dresden-Rossendorf
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopycitations
- 2024Controlling Magneto‐Ionics by Defect Engineering Through Light Ion Implantationcitations
- 2024Controlling Magneto-Ionics by Defect Engineering Through Light Ion Implantationcitations
- 2024Positron annihilation analysis of nanopores and growth mechanism of oblique angle evaporated TiO2 and SiO2 thin films and multilayers
- 2022Ion Intercalation in Lanthanum Strontium Ferrite for Aqueous Electrochemical Energy Storage Devicescitations
- 2022Defect Nanostructure and its Impact on Magnetism of α-Cr2O3 thin filmscitations
- 2022Flexomagnetism and vertically graded Néel temperature of antiferromagnetic Cr2O3 thin films
- 2022Unravelling the Origin of Ultra‐Low Conductivity in SrTiO$_3$ Thin Films: Sr Vacancies and Ti on A‐Sites Cause Fermi Level Pinningcitations
- 2022The impact of Mn nonstoichiometry on the oxygen mass transport properties of La Sr Mn O thin filmscitations
- 2022Interface effect of Fe and Fe<sub>2</sub>O<sub>3</sub> on the distributions of ion induced defectscitations
- 2022Strongly enhanced growth of high-temperature superconducting films on an advanced metallic templatecitations
- 2021Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formationcitations
- 2021Mapping the structure of oxygen-doped wurtzite aluminum nitride coatings from ab initio random structure search and experimentscitations
- 2019Magnetic response of FeRh to static and dynamic disorder
- 2018Voltage-controlled ON−OFF ferromagnetism at room temperature in a single metal oxide filmcitations
- 2018Voltage-controlled ON-OFF ferromagnetism at room temperature in a single metal oxide filmcitations
- 2017New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopycitations
- 2012Investigation of Dual-Beam-Implanted Oxide-Dispersed-Strengthened FeCrAl Alloy by Positron Annihilation Spectroscopycitations
Places of action
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article
Controlling Magneto‐Ionics by Defect Engineering Through Light Ion Implantation
Abstract
<jats:title>Abstract</jats:title><jats:p>Magneto‐ionics relies on the voltage‐driven transport of ions to modify magnetic properties. As a diffusion‐controlled mechanism, defects play a central role in determining ion motion and, hence, magneto‐ionic response. Here, the potential of ion implantation is exploited to engineer depth‐resolved defect type and density with the aim to control the magneto‐ionic behavior of Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> thin films. It is demonstrated that through a single implantation process of light ions (He<jats:sup>+</jats:sup>) at 5 keV, the magneto‐ionic response of a nanostructured 50 nm thick Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> film, in terms of rate and amount of induced magnetization, at short‐, mid‐, and long‐term voltage actuation, can be controlled by varying the generated collisional damage through the ion fluence. These results constitute a proof‐of‐principle that paves the way to further use ion implantation (tuning the ion nature, energy, fluence, target temperature, or using multiple implantations) to enhance performance in magneto‐ionic systems, with implications in ionic‐based devices.</jats:p>