| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Hirschmann, Eric
Helmholtz-Zentrum Dresden-Rossendorf
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Controlling Magneto‐Ionics by Defect Engineering Through Light Ion Implantationcitations
- 2024Controlling Magneto-Ionics by Defect Engineering Through Light Ion Implantationcitations
- 2024Positron annihilation analysis of nanopores and growth mechanism of oblique angle evaporated TiO2 and SiO2 thin films and multilayers
- 2022Defect Nanostructure and its Impact on Magnetism of α-Cr2O3 thin filmscitations
- 2022Effect of Neutron Flux on an Irradiation-Induced Microstructure and Hardening of Reactor Pressure Vessel Steelscitations
- 2022The mechanism behind the high radiation tolerance of Fe–Cr alloyscitations
- 2022Interface effect of Fe and Fe<sub>2</sub>O<sub>3</sub> on the distributions of ion induced defectscitations
- 2021Analyse der Porenstruktur in Schichtsystemen von kontrolliert extrahierten Natrium-Borosilikat-Glasplatten am digital optimierten monoenergetischen Positronen-Strahl des HZDR
Places of action
| Organizations | Location | People |
|---|
article
Controlling Magneto‐Ionics by Defect Engineering Through Light Ion Implantation
Abstract
<jats:title>Abstract</jats:title><jats:p>Magneto‐ionics relies on the voltage‐driven transport of ions to modify magnetic properties. As a diffusion‐controlled mechanism, defects play a central role in determining ion motion and, hence, magneto‐ionic response. Here, the potential of ion implantation is exploited to engineer depth‐resolved defect type and density with the aim to control the magneto‐ionic behavior of Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> thin films. It is demonstrated that through a single implantation process of light ions (He<jats:sup>+</jats:sup>) at 5 keV, the magneto‐ionic response of a nanostructured 50 nm thick Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> film, in terms of rate and amount of induced magnetization, at short‐, mid‐, and long‐term voltage actuation, can be controlled by varying the generated collisional damage through the ion fluence. These results constitute a proof‐of‐principle that paves the way to further use ion implantation (tuning the ion nature, energy, fluence, target temperature, or using multiple implantations) to enhance performance in magneto‐ionic systems, with implications in ionic‐based devices.</jats:p>