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Schenk, Tony
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Topics
Publications (8/8 displayed)
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂citations
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>citations
- 2023Strain as a global factor in stabilizing the ferroelectric properties of ZrO 2citations
- 2020Fully Transparent Friction‐Modulation Haptic Device Based on Piezoelectric Thin Filmcitations
- 2019Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopycitations
- 2018Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffractioncitations
- 2018Origin of Temperature-Dependent Ferroelectricity in SiDoped HfO₂citations
- 2018Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂citations
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article
Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>
Abstract
<jats:title>Abstract</jats:title><jats:p>Since the discovery of ferroelectricity in doped HfO<jats:sub>2</jats:sub> and ZrO<jats:sub>2</jats:sub> thin films over a decade ago, fluorite‐structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal‐oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO<jats:sub>2</jats:sub> films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO<jats:sub>2</jats:sub> films, which can be applied to other fluorite‐structured films.</jats:p>