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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schroeder, Uwe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (27/27 displayed)
- 2024Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>citations
- 2023Strain as a global factor in stabilizing the ferroelectric properties of ZrO 2citations
- 2023Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Filmscitations
- 2023Influence of the ozone dose time during atomic layer deposition on the ferroelectric and pyroelectric properties of 45 nm-thick ZrO 2 filmscitations
- 2022Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Filmscitations
- 2022MOx in ferroelectric memories
- 2022Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Filmscitations
- 2022Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf 0.5 Zr 0.5 O 2 /TiN ferroelectric capacitors studied by x-ray photoemission electron microscopycitations
- 2022Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Filmscitations
- 2021Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memoriescitations
- 2021Chemical Stability of IrO$_{2}$ Top Electrodes in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ ‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gascitations
- 2021Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO$_2$ filmscitations
- 2020Enhanced ferroelectric polarization in TiN/HfO2/TiN capacitors by interface designcitations
- 2020Influence of oxygen content on the structure and reliability of ferroelectric HfxZr1−xO2 layerscitations
- 2020Enhanced Ferroelectric Polarization in TiN/HfO$_{2}$/TiN Capacitors by Interface Designcitations
- 2019Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopycitations
- 2019Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconiumcitations
- 2019Recent progress for obtaining the ferroelectric phase in hafnium oxide based filmscitations
- 2018Review and perspective on ferroelectric HfO₂-based thin films for memory applicationscitations
- 2018Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffractioncitations
- 2018Origin of Temperature-Dependent Ferroelectricity in SiDoped HfO₂citations
- 2018Hafnium oxide based ferroelectric devices for memories and beyondcitations
- 2018Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂citations
- 2015Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applicationscitations
- 2014Conduction mechanisms and breakdown characteristics of Al2O 3-doped ZrO2 high-k dielectrics for three-dimensional stacked metal-insulator-metal capacitorscitations
- 2012Incipient ferroelectricity in Al-doped HfO2 thin filmscitations
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article
Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>
Abstract
<jats:title>Abstract</jats:title><jats:p>Since the discovery of ferroelectricity in doped HfO<jats:sub>2</jats:sub> and ZrO<jats:sub>2</jats:sub> thin films over a decade ago, fluorite‐structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal‐oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO<jats:sub>2</jats:sub> films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO<jats:sub>2</jats:sub> films, which can be applied to other fluorite‐structured films.</jats:p>