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Xu, Bohan
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Publications (7/7 displayed)
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂citations
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>citations
- 2023Strain as a global factor in stabilizing the ferroelectric properties of ZrO 2citations
- 2023Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Filmscitations
- 2023Influence of the ozone dose time during atomic layer deposition on the ferroelectric and pyroelectric properties of 45 nm-thick ZrO 2 filmscitations
- 2022Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Filmscitations
- 2022Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Filmscitations
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article
Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>
Abstract
<jats:title>Abstract</jats:title><jats:p>Since the discovery of ferroelectricity in doped HfO<jats:sub>2</jats:sub> and ZrO<jats:sub>2</jats:sub> thin films over a decade ago, fluorite‐structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal‐oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO<jats:sub>2</jats:sub> films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO<jats:sub>2</jats:sub> films, which can be applied to other fluorite‐structured films.</jats:p>