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| Naji, M. |
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Schmidbauer, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Electronic Synapses Enabled by an Epitaxial SrTiO3-δ / Hf0.5Zr0.5O2 Ferroelectric Field-Effect Memristor Integrated on Silicon
- 2024Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxycitations
- 2023Electronic Synapses Enabled by an Epitaxial SrTiO<sub>3‐δ</sub> / Hf<sub>0.5</sub>Z<sub>r0.5</sub>O<sub>2</sub> Ferroelectric Field‐Effect Memristor Integrated on Siliconcitations
- 2023Y‐Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides
- 2022Monolithic and catalyst-free selective epitaxy of InP nanowires on Silicon
- 2017Strain engineering of ferroelectric domains in KxNa1−xNbO3 epitaxial layers
- 2017Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3
- 2017Strain Engineering of Ferroelectric Domains in $KxNa_{1−x}NbO_3$ Epitaxial Layerscitations
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article
Electronic Synapses Enabled by an Epitaxial SrTiO<sub>3‐δ</sub> / Hf<sub>0.5</sub>Z<sub>r0.5</sub>O<sub>2</sub> Ferroelectric Field‐Effect Memristor Integrated on Silicon
Abstract
<jats:title>Abstract</jats:title><jats:p>Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the promise of enabling high‐performance, energy‐efficient, and scalable neuromorphic computing. Ferroelectric memristive devices integrate the characteristics of both ferroelectric and memristive materials and present a far‐reaching potential as artificial synapses. Here, it is reported on a new ferroelectric device on silicon, a field‐effect memristor, consisting of an epitaxial ultrathin ferroelectric Hf<jats:sub>0.5</jats:sub>Zr<jats:sub>0.5</jats:sub>O<jats:sub>2</jats:sub> film sandwiched between an epitaxial highly doped oxide semiconductor SrTiO<jats:sub>3‐δ</jats:sub> and a top metal. Upon a low voltage of less than 2 V, the field‐effect modulation in the semiconductor enables to access multiple states. The device works in a large time domain ranging from milliseconds down to tens of nanoseconds. By gradually switching the polarization by identical pulses, the ferroelectric diode devices can dynamically adjust the synaptic strength to mimic short‐ and long‐term memory plasticity. Ionic contributions due to redox processes in the oxide semiconductor beneficially influence the device operation and retention.</jats:p>