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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gelinck, Gerwin H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2022Multidimensional Perovskites for High Detectivity Photodiodescitations
- 2021A thin and flexible scanner for fingerprints and documents based on metal halide perovskitescitations
- 2021A thin and flexible scanner for fingerprints and documents based on metal halide perovskitescitations
- 2021Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generationcitations
- 2020On the origin of dark current in organic photodiodescitations
- 2019Short-channel vertical organic field-effect transistors with high on/off ratioscitations
- 2018A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processingcitations
- 2018A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processingcitations
- 2016Data retention in organic ferroelectric resistive switchescitations
- 2016Data retention in organic ferroelectric resistive switchescitations
- 2015Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer
- 2015Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memoriescitations
- 2012Charge transport in amorphous InGaZnO thin film transistorscitations
- 2011Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yieldcitations
- 2011Multilevel information storage in ferroelectric polymer memoriescitations
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article
Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodes
Abstract
<p>Trap states in organic semiconductors are notoriously detrimental to the performance of organic electronics. However, the origin and energetics of trap states remain largely elusive and under debate, especially for bulk-heterojunction (BHJ) photodiodes consisting of electron donor and acceptor materials. Combining three sensitive techniques now enables locating the origin and energy of trap states in six state-of-the-art polymer – non-fullerene acceptor organic photodiodes (OPDs) with noise-based specific detectivities exceeding 10<sup>13</sup> Jones. Analyzing the temperature dependence of the reverse-bias dark current density (J<sub>d</sub>) identifies intra-gap states in the polymers, lying 0.3−0.4 eV above the energy of the highest occupied molecular orbital, as being responsible for J<sub>d</sub>. Sub-bandgap external quantum efficiency spectra of donor-only and acceptor-only diodes confirm that intra-gap states are much more abundant in the polymers. Likewise, responsivity measurements at ultra-low light intensities (10<sup>−7</sup> mW cm<sup>−2</sup>) show trap-mediated charge recombination in BHJ and polymer-only diodes, but not in acceptor-only devices. The results imply that to further improve the specific detectivity of near-infrared OPDs, the intra-gap state energy, and density need to be reduced.</p>