| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Van Gorkom, Bas T.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Identifying the Nature and Location of Defects in n–i–p Perovskite Cells with Highly Sensitive Sub-Bandgap Photocurrent Spectroscopycitations
- 2024Quantifying Non-Radiative Recombination in Passivated Wide-Bandgap Metal Halide Perovskites Using Absolute Photoluminescence Spectroscopycitations
- 20233D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cellscitations
- 20233D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cells.
- 20233D perovskite passivation with a benzotriazole-based 2D interlayer for high-efficiency solar cellscitations
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2022Efficient organic solar cells with small energy losses based on a wide-bandgap trialkylsilyl-substituted donor polymer and a non-fullerene acceptorcitations
- 2021Analysis of the Performance of Narrow-Bandgap Organic Solar Cells Based on a Diketopyrrolopyrrole Polymer and a Nonfullerene Acceptorcitations
- 2021Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generationcitations
Places of action
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article
Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodes
Abstract
<p>Trap states in organic semiconductors are notoriously detrimental to the performance of organic electronics. However, the origin and energetics of trap states remain largely elusive and under debate, especially for bulk-heterojunction (BHJ) photodiodes consisting of electron donor and acceptor materials. Combining three sensitive techniques now enables locating the origin and energy of trap states in six state-of-the-art polymer – non-fullerene acceptor organic photodiodes (OPDs) with noise-based specific detectivities exceeding 10<sup>13</sup> Jones. Analyzing the temperature dependence of the reverse-bias dark current density (J<sub>d</sub>) identifies intra-gap states in the polymers, lying 0.3−0.4 eV above the energy of the highest occupied molecular orbital, as being responsible for J<sub>d</sub>. Sub-bandgap external quantum efficiency spectra of donor-only and acceptor-only diodes confirm that intra-gap states are much more abundant in the polymers. Likewise, responsivity measurements at ultra-low light intensities (10<sup>−7</sup> mW cm<sup>−2</sup>) show trap-mediated charge recombination in BHJ and polymer-only diodes, but not in acceptor-only devices. The results imply that to further improve the specific detectivity of near-infrared OPDs, the intra-gap state energy, and density need to be reduced.</p>