| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Kusch, Gunnar
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying
- 2024Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well
- 2024Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 20233D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cellscitations
- 20233D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cells.
- 20233D perovskite passivation with a benzotriazole-based 2D interlayer for high-efficiency solar cellscitations
- 2022Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy
- 2022Sodium Diffuses from Glass Substrates through P1 Lines and Passivates Defects in Perovskite Solar Modules
- 2021Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs 2 AgBiBr 6 Thin Films
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.
- 2021Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface
- 2021Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs<sub>2</sub>AgBiBr<sub>6</sub> Thin Filmscitations
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wellscitations
- 2019Indium incorporation in quaternary Inx Aly Ga1-x-y N for UVB-LEDscitations
- 2017Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopycitations
- 2016Self-healing thermal annealingcitations
Places of action
| Organizations | Location | People |
|---|
article
Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs<sub>2</sub>AgBiBr<sub>6</sub> Thin Films
Abstract
<jats:title>Abstract</jats:title><jats:p>Halide double perovskites have gained significant attention, owing to their composition of low‐toxicity elements, stability in air, and recent demonstrations of long charge‐carrier lifetimes that can exceed 1 µs. In particular, Cs<jats:sub>2</jats:sub>AgBiBr<jats:sub>6</jats:sub> is the subject of many investigations in photovoltaic devices. However, the efficiencies of solar cells based on this double perovskite are still far from the theoretical efficiency limit of the material. Here, the role of grain size on the optoelectronic properties of Cs<jats:sub>2</jats:sub>AgBiBr<jats:sub>6</jats:sub> thin films is investigated. It is shown through cathodoluminescence measurements that grain boundaries are the dominant nonradiative recombination sites. It also demonstrates through field‐effect transistor and temperature‐dependent transient current measurements that grain boundaries act as the main channels for ion transport. Interestingly, a positive correlation between carrier mobility and temperature is found, which resembles the hopping mechanism often seen in organic semiconductors. These findings explain the discrepancy between the long diffusion lengths >1 µm found in Cs<jats:sub>2</jats:sub>AgBiBr<jats:sub>6</jats:sub> single crystals versus the limited performance achieved in their thin film counterparts. This work shows that mitigating the impact of grain boundaries will be critical for these double perovskite thin films to reach the performance achievable based on their intrinsic single‐crystal properties.</jats:p>