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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Godel, Florian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024A local study of the transport mechanisms in MoS2 layers for magnetic tunnel junctionscitations
- 2024Control of the magnetic anisotropy in multirepeat Pt/Co/Al heterostructures using magnetoionic gatingcitations
- 2023Onset of multiferroicity in prototypical single spin cycloid BiFeO 3 thin filmscitations
- 2022Quantitative Imaging of Exotic Antiferromagnetic Spin Cycloids in Bi Fe O 3 Thin Filmscitations
- 2022Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctionscitations
- 2022Three-dimensional skyrmionic cocoons in magnetic multilayerscitations
- 2022Combined spin filtering actions in hybrid magnetic junctions based on organic chains covalently attached to graphenecitations
- 20210D/2D Heterostructures Vertical Single Electron Transistorcitations
- 20210D/2D Heterostructures Vertical Single Electron Transistorcitations
- 2021Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructurescitations
- 2021Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructurescitations
- 2021A perpendicular graphene/ferromagnet electrode for spintronicscitations
- 2021WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuitscitations
- 2020Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopycitations
- 2020WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuitscitations
- 2019Band-Structure Spin-Filtering in Vertical Spin Valves Based on Chemical Vapor Deposited WS2citations
- 2018Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitridecitations
- 2018Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitridecitations
- 2017Tuning contact transport mechanisms in bilayer MoSe 2 transistors up to Fowler–Nordheim regimecitations
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article
0D/2D Heterostructures Vertical Single Electron Transistor
Abstract
<jats:title>Abstract</jats:title><jats:p>Mixed‐dimensional heterostructures formed by the stacking of 2D materials with nanostructures of distinct dimensionality constitute a new class of nanomaterials that offers multifunctionality that goes beyond those of single dimensional systems. An unexplored architecture of single electron transistor (SET) is developed that employs heterostructures made of nanoclusters (0D) grown on a 2D molybdenum disulfide (MoS<jats:sub>2</jats:sub>) channel. Combining the large Coulomb energy of the nanoclusters with the electronic capabilities of the 2D layer, the concept of 0D–2D vertical SET is unveiled. The MoS<jats:sub>2</jats:sub> underneath serves both as a charge tunable channel interconnecting the electrode, and as bottom electrode for each v‐SET cell. In addition, its atomic thickness makes it thinner than the Debye screening length, providing electric field transparency functionality that allows for an efficient electric back gate control of the nanoclusters charge state. The Coulomb diamond pattern characteristics of SET are reported, with specific doping dependent nonlinear features arising from the 0D/2D geometry that are elucidated by theoretical modeling. These results hold promise for multifunctional single electron device taking advantage of the versatility of the 2D materials library, with as example envisioned spintronics applications while coupling quantum dots to magnetic 2D material, or to ferroelectric layers for neuromorphic devices.</jats:p>