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| Naji, M. |
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| Azevedo, Nuno Monteiro |
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Li, Yifei
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article
Making Large‐Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening
Abstract
<jats:title>Abstract</jats:title><jats:p>The synthesis of large‐area TiS<jats:sub>2</jats:sub> thin films is reported at temperatures as low as 500 °C using a scalable two‐step method of metal film deposition followed by sulfurization in an H<jats:sub>2</jats:sub>S gas furnace. It is demonstrated that the lowest‐achievable sulfurization temperature depends strongly on the oxygen background during sulfurization. This dependence arises because TiO bonds present a substantial kinetic and thermodynamic barrier to TiS<jats:sub>2</jats:sub> formation. Lowering the sulfurization temperature is important to make smooth films, and to enable integration of TiS<jats:sub>2</jats:sub> and related transition metal dichalcogenides—including metastable phases and alloys—into device technology.</jats:p>