| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Schenk, Tony
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂citations
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>citations
- 2023Strain as a global factor in stabilizing the ferroelectric properties of ZrO 2citations
- 2020Fully Transparent Friction‐Modulation Haptic Device Based on Piezoelectric Thin Filmcitations
- 2019Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopycitations
- 2018Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffractioncitations
- 2018Origin of Temperature-Dependent Ferroelectricity in SiDoped HfO₂citations
- 2018Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂citations
Places of action
| Organizations | Location | People |
|---|
article
Fully Transparent Friction‐Modulation Haptic Device Based on Piezoelectric Thin Film
Abstract
<jats:title>Abstract</jats:title><jats:p>Standing Lamb waves in vibrating plates enable haptic interfaces. If the out‐of‐plane displacement of these waves exceeds 1 µm at frequencies above 25 kHz, a silent friction modulation can be created between a human finger and a vibrating plate. A fully transparent friction‐modulation haptic device based on a piezoelectric thin film is demonstrated. The antisymmetric Lamb mode induced at 73 kHz allows for a functional performance that fulfills all conditions for practical use. Out‐of‐plane displacement reaches 2.9 µm when 150 V unipolar voltage is applied. The average transmittance of the whole transducer reaches 75%. The key points of this technology are: 1) a thin HfO<jats:sub>2</jats:sub> layer between lead zirconate titanate film and substrate that prevents chemical reaction between them; 2) the efficient integration of transparent indium tin oxide electrodes and solution‐derived piezoelectric lead zirconate titanate thin film onto optical‐grade fused silica; and 3) the use of a transparent insulating layer made of SU‐8 photoresist.</jats:p>