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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Yan, Feng
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Understanding the Surface Chemistry of SnO 2 Nanoparticles for High Performance and Stable Organic Solar Cellscitations
- 2024Use of carbon electrodes to reduce mobile ion concentration and improve reliability of metal halide perovskite photovoltaicscitations
- 2024Understanding the Surface Chemistry of SnO2 Nanoparticles for High Performance and Stable Organic Solar Cellscitations
- 2023Temperature-responsive and biocompatible nanocarriers based on clay nanotubes for controlled anti-cancer drug releasecitations
- 2023Effect of intermolecular interactions on the glass transition temperature of chemically modified alternating polyketonescitations
- 2023Effect of intermolecular interactions on the glass transition temperature of chemically modified alternating polyketonescitations
- 2022Optimizing inference serving on serverless platformscitations
- 2018p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cellscitations
- 2014Physicochemical properties of 1,2,4-triazolium perfluorobutanesulfonate as an archetypal pure protic organic ionic plastic crystal electrolyte
Places of action
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article
p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cells
Abstract
<jats:title>Abstract</jats:title><jats:p>The ability to tune the electronic properties of soluble wide bandgap semiconductors is crucial for their successful implementation as carrier‐selective interlayers in large area opto/electronics. Herein the simple, economical, and effective p‐doping of one of the most promising transparent semiconductors, copper(I) thiocyanate (CuSCN), using C<jats:sub>60</jats:sub>F<jats:sub>48</jats:sub> is reported. Theoretical calculations combined with experimental measurements are used to elucidate the electronic band structure and density of states of the constituent materials and their blends. Obtained results reveal that although the bandgap (3.85 eV) and valence band maximum (−5.4 eV) of CuSCN remain unaffected, its Fermi energy shifts toward the valence band edge upon C<jats:sub>60</jats:sub>F<jats:sub>48</jats:sub> addition—an observation consistent with p<jats:italic>‐</jats:italic>type doping. Transistor measurements confirm the p‐doping effect while revealing a tenfold increase in the channel's hole mobility (up to 0.18 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>), accompanied by a dramatic improvement in the transistor's bias‐stress stability. Application of CuSCN:C<jats:sub>60</jats:sub>F<jats:sub>48</jats:sub> as the hole‐transport layer (HTL) in organic photovoltaics yields devices with higher power conversion efficiency, improved fill factor, higher shunt resistance, and lower series resistance and dark current, as compared to control devices based on pristine CuSCN or commercially available HTLs.</jats:p>